CM200HG-130H

CM200HG-130H POWEREX | Alldatasheet

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Single IGBTMOD™ HVIGBT Module

200 Amperes/6500 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram D A E B L (2 PLACES)J C K (4 PLACES) DETAIL “A” DETAIL “A” DETAIL “B” DETAIL “B” H F GM V X Y H W Q S R T V U N P Z AACC BBBB DD Dimensions Inches Millimeters A 5.51 140.0 B 2.87 73.0 D 4.88 124.0 E 2.24 57.0 F 0.85 21.6 G 0.51 12.9 H 0.20 5.0 J 1.73 44.0 K M6 Metric M6 L M8 Metric M8 M 0.64 16.2 N 1.59 40.4 P 1.10 28.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Traction £ Medium Voltage Drives £ High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200HG-130H is a 6500V (VCES), 200 Ampere Single IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 200 130 Dimensions Inches Millimeters Q 1.44 36.5 R 0.22 5.5 S 0.16 4.0 T 0.68 17.4 U 1.61 41.0 V 0.24 6.0 W 2.44 62.0 X 0.47 12.0 Y 0.14 3.5 Z 0.11 2.8 AA 0.06 1.6 BB 0.02 0.5 CC 0.05 Dia. 1.2 Dia. DD 10° 10°

Single IGBTMOD™ HVIGBT Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 2 8/05 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200HG-130H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Operating Temperature Topr -40 to 125 °C Collector-Emitter Voltage (VGE = 0V, Tj = -40°C) VCES 5800 Volts Collector-Emitter Voltage (VGE = 0V, Tj = +25°C) VCES 6300 Volts Collector-Emitter Voltage (VGE = 0V, Tj = +125°C) VCES 6500 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, Tc = 80°C) IC 200 Amperes Peak Collector Current (Pulse) ICM 400* Amperes Emitter Current (Tc = 25°C) IE 200 Amperes Emitter Surge Current (Pulse) IEM 400* Amperes Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj(max) ≤ 125°C) PC 2900 Watts Partial Discharge (V1 = 6900 Vrms, V2 = 5100 Vrms, 60 Hz (Acc. to IEC 1287)) Qpd 10 pC Max. Mounting Torque M8 Main Terminal Screws – 133 in-lb Max. Mounting Torque M6 Mounting Screws – 53 in-lb Module Weight (Typical) – 0.52 kg Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 10200 Volts Maximum Turn-Off Switching Current – 400 Amperes (VCC ≤ 4500V, VGE = ±15V, RG(off) ≥ 72Ω, Tj = 125°C) Short Circuit Capability, Maximum Pulse Width – 10 µs (VCC ≤ 4500V, VGE = ±15V, RG(off) ≥ 72Ω, Tj = 125°C) Maximum Reverse Recovery Instantaneous Power – 1200 kW (VCC ≤ 4500V, die/dt ≤ 1000A/μs, Tj = 125°C) * Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Toprmax rating (125°C). **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Single IGBTMOD™ HVIGBT Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current* ICES V CE = VCES, VGE = 0V, Tj = 25°C – – 3.0 mA V CE = VCES, VGE = 0V, Tj = 125°C – 10 30.0 mA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5.0 6.0 7.0 Volts Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Collector-Emitter Saturation Voltage V CE(sat) I C = 200A, VGE = 15V, Tj = 25°C – 5.1 – Volts I C = 200A, VGE = 15V, Tj = 125°C – 5.0 – Volts Input Capacitance Cies VCE = 10V, VGE = 0V, – 41.0 – nF Output Capacitance Coes f = 100kHz, – 2.5 – nF Reverse Transfer Capacitance Cres Tj = 25°C – 0.7 – nF Total Gate Charge QG V CC = 3600V, IC = 200A, VGE = 15V – 3.3 – µC Emitter-Collector Voltage VEC I E = 200A, VGE = 0V, Tj = 25°C – 4.0 – Volts IE = 200A, VGE = 0V, Tj = 125°C – 3.6 – Volts Turn-On Delay Time td(on) VCC = 3600V, IC = 200A, – 1.2 – µs Turn-On Rise Time tr V GE1 = -VGE2 = 15V, RG(on) = 30Ω, – 0.35 – µs Turn-On Switching Energy Eon T j = 125°C, toff = 60µs, Inductive Load – 1.5 – J/P Turn-Off Delay Time td(off) VCC = 3600V, IC = 200A, – 6.6 – µs Turn-Off Fall Time 1 tf1 VGE1 = -VGE2 = 15V, – 0.5 – µs Turn-Off Fall Time 2 tf2 RG(off) = 72Ω, – 3.3 – µs Turn-Off Switching Energy Eoff T j = 125°C, toff = 60µs, Inductive Load – 1.2 – J/P Reverse Recovery Time 1 trr1 VCC = 3600V, IE = 200A, – 1.0 – µs Reverse Recovery Time 2 trr2 die/dt = -670A/μs, – 2.4 – µs Reverse Recovery Charge Qrr Tj = 125°C, – 370 – µC Reverse Recovery Energy** Erec toff = 60µs, Inductive Load – 0.7 – J/P * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Q Per IGBT – – 42.0 K/kW Thermal Resistance, Junction to Case R th(j-c) D Per FWDi – – 66.0 K/kW Contact Thermal Resistance, Case to Fin R th(c-f) Per Module, Thermal Grease Applied – 18.0 – K/kW Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Comparative Tracking Index CTI – 600 – – – Clearance – – 26.0 – – mm Creepage Distance – – 56.0 – – mm Internal Inductance LC-E(int) – – 54.0 – µH Internal Lead Resistance RC-E(int) – – – – m Ω

Single IGBTMOD™ HVIGBT Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 4 8/05 COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 400 800 2000 0 2012 164 8 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C 1200 1600 VGE = 20V 18V 12V 13V 14V 15V 10V 16V FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 500300 400100 200 0 500300 400100 200 VGE = 0V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) EMITTER CURRENT, IE, (AMPERES) 0.2 0.4 0.6 1.2 1.0 FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) VCC = 3600V VGE = ±15V RG(on) = 30Ω LS = 200nH Tj = 125°C0.8 0 500300 400100 200 0.2 0.4 0.6 1.2 1.0 VCC = 3600V VGE = ±15V RG(on) = 30Ω LS = 200nH Tj = 125°C0.8 REVERSE RECOVERY ENERGY, Erec, (J/PULSE) EMITTER CURRENT, IE, (AMPERES) 0.2 0.4 1.2 1.0 FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 0 1204020 60 10080 VCC = 3600V VGE = ±15V IC = 200A LS = 200nH Tj = 125°C 0.6 0.8 0.2 0.4 1.2 1.0 0 1204020 60 10080 VCC = 3600V VGE = ±15V IC = 200A LS = 200nH Tj = 125°C 0.6 0.8 REVERSE RECOVERY ENERGY, Erec, (J/PULSE) GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω) FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARGE, Qrr, (mC) EMITTER CURRENT, IE, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARGE, Qrr, (mC) COLLECTOR CURRENT, IC, (AMPERES) 1050 2015 GATE-EMITTER VOLTAGE, VGE, (VOLTS) TRANSFER CHARACTERISTICS (TYPICAL) 500 4000 3500 3000 2000 1500 1000 2500 Tj = 25°C Tj = 125°C VCE = 20V SWITCHING TIME, td(on), (µs) TURN-ON DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) 101 100 10-1 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, td(off), (µs) TURN-OFF DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C 101 103102 101 100 10-1 COLLECTOR CURRENT, IC, (AMPERES) 101 103102

Single IGBTMOD™ HVIGBT Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, tf, (µs) FALL TIME VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, tr, (µs) RISE TIME VS. COLLECTOR CURRENT (TYPICAL) 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0.5 500300 400200100 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eoff, (J/PULSE) SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eon, (J/PULSE) SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS, Eoff, (J/PULSE) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, Eon, (J/PULSE) GATE RESISTANCE, RG, (Ω) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (pF) 10-1 100 101 102 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) 102 100 10-1 101 Cies Coes CresVGE = 15V f = 100kHz Tj = 25°C TIME, (s) TRANSIENT IMPEDANCE, Rth(j-c) 10-3 10-2 10-1 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDI) 1.2 1.0 0.4 0.2 0.6 0.8 SINGLE PULSE TC = 25°C IGBT = Rth(j-c)Q = 42°K/kW FWDI = Rth(j-c)D = 66°K/kW COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C 101 100 10-1 101 103102 VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0.5 500300 4002001000 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0.5 12060 1008040200 4.0 2.5 2.0 1.5 3.0 3.5 1.0 0.5 12060 1008040200 VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C 500300 4002001000 VCC = 3600V VGE = ±15V IC = 200A LS = 200nH Tj = 125°C VCC = 3600V VGE = ±15V IC = 200A LS = 200nH Tj = 125°C 101 100 10-1 101 103102 VGE = 15V Tj = 25°C Tj = 125°C SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL)