CM200EXS-24S

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200 Amperes/1200 Volts

107/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of one IGBT Transistor and one super-fast recovery diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Lo w Drive Power £ Lo w V CE(sat) £ Discrete Super-Fast Recovery Clamp Diode R oHS Compliant £ Isolat ed Copper Baseplate for Easy Heat Sinking Applications: DC/DC C onverter £ DC Mot or Control £ Br ake Circuit Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM200EXS-24S is a 1200V CES), 200 Ampere Chopper IGBT Power Module. Type Current Rating VCES Amperes V olts (x 50) CM 200 24 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.09 104.0 B 2.44 62.0 C 0.47 11 .9 D 3.5 89.0 E 2.44 62.0 F 0.53 13.5 G 0.69 17 .66 H 0.75 19.05 J 0.14 3.8 K 0.16 4.2 L 1 .97 50.0 M 0.55 14.0 N 0.87 22.0 P 2.26 57 .5 Q 1 .83 46.5 R 2.9 73.71 S 0.8 20.5 T 0.67 17 .0 Dimensions Inches Millimeters U 0.27 7 .0 V 0.67 1 7. 0 W 0.64 16.4 X 0.51 13.1 Y 0.17 4.4 Z 0.49 12.5 AA 0.12 3.0 AB 0.17 Dia. 4.3 Dia. AC 0.102 Dia. 2.6 Dia. AD 0.088 Dia. 2.25 Dia. AE 0.15 3.81 AF 0.045 1 .15 AG 0.025 0.65 AH 0.05 1 AJ 0.29 7 .4 AK 0.21 Dia. 5.5 Dia. AL M5 M5 Tr Es(4) G(3) Di E(7) C(2) K(8) A(1) Th TH1 (6) TH2 (5) N T C A D E F JJ Z AA AB B AH AJ AE AD AC AF AG G H P C X T S R Q N V U W AK (4 PLACES) AL (4 PLACES) M Y K L DETAIL "A" DETAIL "B" 3 45 6 Tolerance Otherwise Specified (mm) The tolerance of size between terminals is assumed to ±0.4 Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1. 2

Chopper IGBT NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 Rev. 0 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 119°C)*2 I C 200 Amperes Collector Current (Pulse, Repetitive)*3 I CRM 400 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 1500 Watts Repetitive Peak Reverse Voltage (Clamp Diode Part, VGE = 0V) VRRM 1200 Volts Forward Current (Clamp Diode Part, TC = 25°C)*2,*4 IF*1 200 Amperes Forward Current (Clamp Diode Part, Pulse, Repetitive)*3 IFRM*1 400 Amperes Maximum Junction Temperature Tj(max) +175 °C Operating Junction Temperature Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C Case Temperature TC -40 to +125 °C Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) VISO 2500 Volts *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 18.9 40.4 51 .1 LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor 36.9 37 .5 37 .9 Th Tr Di

Chopper IGBT NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 Rev. 0 Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES ±V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 20mA, VCE = 10V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 200A, VGE = 15V, Tj = 25°C*6 — 1 .80 2.25 Volts (Terminal) I C = 200A, VGE = 15V, Tj = 125°C*6 — 2.00 — Volts I C = 200A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 200A, VGE = 15V, Tj = 25°C*6 — 1 .70 2.15 Volts (Chip) I C = 200A, VGE = 15V, Tj = 125°C*6 — 1 .90 — Volts I C = 200A, VGE = 15V, Tj = 150°C*6 — 1 .95 — Volts Input Capacitance Cies — — 20 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 4.0 nF Reverse Transfer Capacitance Cres — — 0.33 nF Gate Charge QG V CC = 600V, IC = 200A, VGE = 15V — 466 — nC Turn-on Delay Time td(on) — — 800 ns Rise Time tr V CC = 600V, IC = 200A, VGE = ±15V, — — 200 ns Turn-off Delay Time td(off) R G = 0Ω, Inductive Load — — 600 ns Fall Time tf — — 300 ns Repetitive Peak Reverse Current IRRM V R = VRRM — — 1 mA Forward Voltage Drop VF*1 I F = 200A, VGE = 0V, Tj = 25°C*6 — 1 .80 2.25 Volts Clamp Di Part (Terminal) I F = 200A, VGE = 0V, Tj = 125°C*6 — 1 .80 — Volts I F = 200A, VGE = 0V, Tj = 150°C*6 — 1 .80 — Volts Forward Voltage Drop VF*1 I F = 200A, VGE = 0V, Tj = 25°C*6 — 1 .70 2.15 Volts Clamp Di Part (Chip) I F = 200A, VGE = 0V, Tj = 125°C*6 — 1 .70 — Volts I F = 200A, VGE = 0V, Tj = 150°C*6 — 1 .70 — Volts Reverse Recovery Time trr*1 V CC = 600V, IF = 200A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr*1 R G = 0Ω, Inductive Load, Clamp Di Part — 10.7 — µC Turn-on Switching Energy per Pulse Eon V CC = 600V, IC = IF = 200A, — 30.7 — mJ Turn-off Switching Energy per Pulse Eoff V GE = ±15V, RG = 0Ω, Tj = 150°C, — 21 .5 — mJ Reverse Recovery Energy per Pulse Err*1 Inductive Load, Clamp Di Part — 14.2 — mJ Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — — — mΩ Per Switch,TC = 25°C*2 Internal Gate Resistance rg — 9.8 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 18.9 40.4 51 .1 LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor 36.9 37 .5 37 .9 Th Tr Di

Chopper IGBT NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 Rev. 0 Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R25 T C = 25°C*2 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R T C = 100°C, R100 = 493Ω -7 .3 — +7 .8 % B Constant B(25/50) Approximate by Equation*8 — 3375 — K Power Dissipation P25 T C = 25°C*2 — — 10 mW Thermal Resistance Characteristics Thermal Resistance, Junction to Case*2 R th(j-c)Q Per IGBT — — 0.10 K/W Thermal Resistance, Junction to Case*2 R th(j-c)D Per Clamp Diode — — 0.19 K/W Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 25 — K/kW Case to Heatsink*2 (Per 1 Module)*7 Mechanical Characteristics Mounting Torque Mt Main Terminals, M5 Screw 22 27 31 in-lb M s Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 20 — — mm Terminal to Baseplate 17 — — mm Clearance d a Terminal to Terminal 12 — — mm Terminal to Baseplate 10 — — mm Weight m — 210 — Grams Flatness of Baseplate ec On Centerline X, Y*5 -100 — + 100 µm Recommended Operating Conditons, Ta = 25°C (DC) Supply Voltage VCC Applied Across P-N — 600 850 Volts Gate-Emitter Drive Voltage VGE(on) Applied Across G-E 13.5 15.0 16.5 Volts External Gate Resistance RG 0 — 30 Ω *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 B(25/50) = In( R25)/( ) R50 T25 T50 R 25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R 50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] – : CONCAVE + : CONVEX – : CONCAVE X Y + : CONVEX MOUNTING SIDE MOUNTING SIDE MOUNTING SIDE 18.9 40.4 51 .1 LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor 36.9 37 .5 37 .9 Th Tr Di

Chopper IGBT NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 Rev. 0 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C IC = 400A IC = 200A IC = 80A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 0 2 4 6 8 10 VGE = 20V 1213.5 Tj = 25°C 400 300 100 200 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) 3.5 2.5 3.0 2.0 1.5 0.5 1.0 400300100 200 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C

Chopper IGBT NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 Rev. 0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-2 10-1 101 Cies Coes Cres 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load tf 103 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load tf 103 EXTERNAL GATE RESISTANCE, RG, (Ω) 103 101 102 SWITCHING TIME, (ns) SWITCHING TIME, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr tf 10110-1 100 VCC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive Load 102 VGE = 0V Tj = 25°C

Chopper IGBT NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 Rev. 0 EXTERNAL GATE RESISTANCE, RG, (Ω) 103 10110-1 100 101 102 SWITCHING TIME, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V IC = 200A Tj = 150°C Inductive Load tf 102 GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 100 200 300 700500 600400 IC = 200A VCC = 600V Tj = 25°C EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns)

Chopper IGBT NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 Rev. 0 GATE RESISTANCE, RG, (Ω) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 102 10-1 100 101 101 100 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C VCC = 600V VGE = ±15V IC/IE = 200A Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 102 101 100 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 102 101 101 102 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Eon Eoff Err Eon Eoff Err Eon Eoff Err GATE RESISTANCE, RG, (Ω) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 102 10-1 100 101 101 100 102 VCC = 600V VGE = ±15V IC/IE = 200A Tj = 150°C Eon Eoff Err 101 102 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)

Chopper IGBT NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 Rev. 0 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.10°K/W (IGBT) R th(j-c) = 0.19°K/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')