CM200DY-12NF POWEREX | Alldatasheet

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Dual IGBTMOD™ NF-Series Module

200 Amperes/600 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Description: Pow erex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DY -12NF is a 600V (V CES ),

200 Ampere Dual IGBTMOD™

Pow er Module. Type Current Rating V CES Amperes Volts (x 50) CM 200 12 A EE FF B N L (2 PLACES) D M NUTS (3 PLACES) J G G H KKK PPP T THICK U WIDTHQQ VC S R C1E2C2E1 TC MEASURED POINT (BASEPLATE) LABEL C2E1 E2 C1 Dimensions Inches Millimeters A 3.70 94.0 B 1.89 48.0 E 0.67 17.0 F 0.91 23.0 G 0.16 4.0 H 0.71 18.0 J 0.51 13.0 K 0.47 12.0 Dimensions Inches Millimeters L 0.26 Dia. Dia. 6.5 M M5 Metric M5 N 0.79 20.0 P 0.63 16.0 Q 0.28 7.0 R 0.83 21.2 S 0.30 7.5 T 0.02 0.5 U 0.110 2.8 V 0.16 4.0

Dual IGBTMOD™ NF-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DY-12NF Units Junction Temperature T j –40 to 150 °C Storage Temperature T stg –40 to 125 °C Collector-Emitter Voltage (G-E Short) V CES 600 Volts Gate-Emitter Voltage (C-E Short) V GES ±20 Volts Collector Current*** (DC, TC ' = 93°C) IC 200 Amperes Peak Collector Current I CM 400* Amperes Emitter Current (TC = 25°C) I E 200 Amperes Peak Emitter Current I EM 400* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P C 650 Watts Mounting Torque, M5 Main Terminal — 30 in-lb Mounting Torque, M6 Mounting — 40 in-lb W eight — 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V ISO 2500 Volts *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed TjMAX rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V — — 1.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 20mA, VCE = 10V 5.0 6.0 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 200A, VGE = 15V , Tj = 25°C— 1.7 2.2 Volts IC = 200A, VGE = 15V, Tj = 125°C— 1.7 — Volts Total Gate Charge Q G VCC = 300V, IC = 200A, VGE = 15V — 800 — nC Emitter-Collector Voltage V EC IE = 200A, VGE = 0V — — 2.6 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies —— 3 0 n f Output Capacitance C oes VCE = 10V, VGE = 0V — — 3.7 nf Reverse Transfer Capacitance C res —— 1.2 nf Inductive Turn-on Delay Time t d(on) —— 120 ns Load Rise Time t r VCC = 300V, IC = 200A, — — 120 ns Switch Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 3.1Ω ,— — 300 ns Time Fall Time t f Inductive Load — — 300 ns Diode Reverse Recovery Time t rr Switching Operation, — — 150 ns Diode Reverse Recovery Charge** Q rr IE = 200A — 3.5 — µC *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi) *Tc' measured point is just under chips. If this value is used, Rth(f-a) should be measured just under chips

Dual IGBTMOD™ NF-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)QP er IGBT 1/2 Module, TC Reference — — 0.19 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)DP er FWDi 1/2 Module, TC Reference — — 0.35 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c')QP er IGBT 1/2 Module, — — 0.13 °C/W TC Reference Point Under Chips Contact Thermal Resistance R th(c-f) Per 1/2 Module, Thermal Grease Applied — 0.07 — °C/W External Gate Resistance R G 3.1 — 31 Ω COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 100 102 102 101 100 10-1 10101 34 25 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, I E, (AMPERES) GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 681 0 1 4 12 16 18 20 Tj = 25°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400300200 VGE = 15V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 0V C ies C oes C res IC = 400A IC = 200A IC = 80A COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 VGE = 20V Tj = 25oC 100 400 300 200 100 10-1 COLLECTOR CURRENT, I C , (AMPERES) 103 101 102 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 300V VGE = ±15V R G = 3.1Ω Tj = 125°C Inductive Load tf 103

Dual IGBTMOD™ NF-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth ¥ (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.19°C/W (IGBT) R th(j-c) = 0.35°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE VS. V GE 200 400 600 1200 1000800 VCC = 300V EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) VCC = 300V VGE = ±15V R G = 3.1Ω Tj = 25°C Inductive Load VCC = 200V IC = 200A 103 COLLECTOR CURRENT, I C , (AMPERES) SWITCHING LOSS, E SW( on), ESW( off), (mJ/PULSE) 101 101 102 100 10-1 VCC = 300V VGE = ±15V R G = 3.1Ω Tj = 125°C Inductive Load C Snubber at Bus VCC = 300V VGE = ±15V IC = 200A Tj = 125°C Inductive Load C Snubber at Bus 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE RESISTANCE, R G , (Ω ) SWITCHING LOSS, E SW( on), ESW( off), (mJ/PULSE) 102 100 101 101 100 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) ESW(on) ESW(off) ESW(on) ESW(off) Irr trr