CM200DU-34KA

CM200DU-34KA POWEREX | Alldatasheet

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Dual IGBTMOD™ KA-Series Module

200 Amperes/1700 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Description: Pow erex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ W elding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-34KA is a 1700V (V CES ), 200 Ampere Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 200 34 Outline Drawing and Circuit Diagram NP C1E2 C2E1 C1E2C2E1 2525 LC CM LABEL V - THICK x W - WIDE TAB (4 PLACES) T - (4 TYP.) X R H H J QQ KKK M F G F E D C B A S - NUTS (3 TYP) TC Measured Point Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.83 21.0 G 0.16 4.0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 Dimensions Inches Millimeters M 0.33 8.5 N 0.10 2.5 P 0.85 21.6 Q 0.98 25.0 R 0.86 21.75 SM 6 M 6 T 0.26 Dia. 6.5 Dia. V 0.02 0.5 W 0.110 2.79 X 1.08 27.35

Dual IGBTMOD™ KA-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DU-34KA Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1700 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 200 Amperes Peak Collector Current I CM 400* Amperes Emitter Current (Tc = 25°C) I E 200 Amperes Peak Emitter Current I EM 400* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P c 1100 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb W eight – 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 3500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 20mA, VCE = 10V 4.0 5.5 7.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 200A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts IC = 200A, VGE = 15V, Tj = 125°C– 3.8 – Volts Total Gate Charge Q G VCC = 1000V, IC = 200A, VGE = 15V – 900 – nC Emitter-Collector Voltage V EC IE = 200A, VGE = 0V, Tj = 25°C– – 4.6 Volts IE = 200A, VGE = 0V, Tj = 125°C– 2.2 – Volts Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 29.0 nf Output Capacitance C oes VCE = 10V, VGE = 0V – – 4.8 nf Reverse Transfer Capacitance C res –– 1.5 nf Resistive Turn-on Delay Time t d(on) VCC = 1000V, IC = 200A, – – 600 ns Load Rise Time t r VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time t d(off) R G = 1.6/H9024,– – 700 ns Times Fall Time t f Inductive Load – – 800 ns Diode Reverse Recovery Time t rr Switching Operation – – 600 ns Diode Reverse Recovery Charge Q rr IE = 200A – 9.6 – µC Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dual IGBTMOD™ KA-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)QP er IGBT 1/2 Module – – 0.11 °C/W Thermal Resistance, Junction to Case R th(j-c)RP er FWDi 1/2 Module – – 0.18 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.020 – °C/W Thermal Resistance R th(j-c')QT c Measured Point – – 0.05* °C/W (Under Chips - IGBT Part) * If you use this value, Rth(f-a) should be measured just under the chips. COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 200 15 14 Tj = 25oC 100 300 400 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 05 1 0 15 20 200 100 400 300 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 100 200 VGE = 15V Tj = 25°C Tj = 125°C 300 400 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 80A IC = 400A IC = 200A COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 101 100 102 10-1 VGE = 0V f = 1MHz 101 C ies C oes C res VGE = 20V 1234 5 100 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 101 102 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C

Dual IGBTMOD™ KA-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.11°C/W Zth = Rth  (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Zth = Rth  (NORMALIZED VALUE) 10-1 10-2 10-3 Single Pulse T C = 25°C Per Unit Base = Rth(j-c) = 0.18°C/W REVERSE RECOVERY CURRENT, I rr, (AMPERES) GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 400 800 1200 VCC = 1000V VCC = 800V IC = 200A EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr 102 101 100 COLLECTOR CURRENT, I C , (AMPERES) 101 102 103 104 102 101 td(off) td(on) tr VCC = 1000V VGE = ±15V R G = 1.6 Ω Tj = 125°C Inductive Load VCC = 1000V VGE = ±15V R G = 1.6 Ω Tj = 25°C Inductive Load tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103