DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Dual IGBTMOD™ NFH-Series Module

200 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 7/11 Rev. 1 1 Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DU-24NFH is a 1200V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 200 24 Outline Drawing and Circuit Diagram A W FTF N AA J G Q Q G HEB L (4 PLACES) D M (3 PLACES) KKK PP P QQ V Z Y X V SS U C S R C2E1 E2 C1 LABEL C2E1 E2 C1 Dimensions Inches Millimeters A 4.25 108.0 B 2.44 62.0 F 0.98 25.0 G 0.24 6.0 H 0.59 15.0 J 0.7854 19.95 K 0.55 14.0 L 0.26 Dia. 6.5 Dia. M M6 Metric M6 N 1 .022 25.95 Dimensions Inches Millimeters P 0.71 18.0 Q 0.28 7 .0 R 0.874 22.2 S 0.30 7 .5 T 0.94 24.0 U 0.11 2.8 V 0.16 4.0 W 0.33 8.5 X 0.46 11 .75 Y 0.012 ~ 0 0.3 ~ 0 Z 0.85 21 .5 AA 0.69 17 .5

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 7/11 Rev. 12 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DU-24NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 25°C) IC 200* Amperes Peak Collector Current ICM 400* Amperes Emitter Current** (TC = 25°C) IE 200* Amperes Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 830 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 1300 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 0.7 µA Gate-Emitter Threshold Voltage VGE(th) I C = 20mA, VCE = 10V 4.5 6.0 7 .5 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 200A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts I C = 200A, VGE = 15V, Tj = 125°C — 5.0 — Volts Total Gate Charge QG V CC = 600V, IC = 200A, VGE = 15V — 900 — nC Emitter-Collector Voltage VEC I E = 200A, VGE = 0V — — 3.5 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 32 nf Output Capacitance Coes V CE = 10V, VGE = 0V — — 2.7 nf Reverse Transfer Capacitance Cres — — 0.6 nf Inductive Turn-on Delay Time t d(on) — — 300 ns Load Rise Time tr V CC = 600V, IC = 200A, — — 80 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, RG = 1 .6Ω, — — 500 ns Time Fall Time tf Inductive Load Switching Operation, — — 150 ns Diode Reverse Recovery Time trr I E = 200A — — 250 ns Diode Reverse Recovery Charge** Qrr — 7 .5 — µC * Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 7/11 Rev. 1 3 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module, T C Reference — — 0.15 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/2 Module, T C Reference — — 0.24 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)'Q Per IGBT 1/2 Module, — — 0.095 °C/W T C Reference Point Under Chips Thermal Resistance, Junction to Case R th(j-c)'D Per FWDi 1/2 Module, — — 0.14 °C/W T C Reference Point Under Chips Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W External Gate Resistance RG 1 .6 — 16 Ω COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-1 10101 3425 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 68 10 1412 16 18 20 Tj = 25°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 0 5 15 20 VGE = 10V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 400A IC = 200A IC = 80A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02 46 81 0 VGE = 20V Tj = 25°C 400 200 300 100 400 200 300 100 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400100 200 300 VGE = 15V Tj = 25°C Tj = 125°C 10-1

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 7/11 Rev. 14 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.15°C/W (IGBT) Rth(j-c) = 0.24°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 200 400 800600 140012001000 VCC = 600V VCC = 400V IC = 200A COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 101 102 101 100 VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive Load C Snubber at Bus 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) ESW(on) ESW(off) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 100 101 101 100 VCC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive Load C Snubber at Bus 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) ESW(on) ESW(off) GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 100 101 101 100 VCC = 600V VGE = ±15V IE = 200A Tj = 125°C Inductive Load C Snubber at Bus 102 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 101 102 101 100 VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive Load C Snubber at Bus 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) Err Err COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive Load tf 103 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive Load Irr trr