CM200DU-24F

CM200DU-24F POWEREX | Alldatasheet

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Technical content

Dual IGBTMOD™

200 Amperes /1200 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 B 2.44 62.0 F 0.67 17.0 G 0.16 4.0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 Dimensions Inches Millimeters L 0.87 22.0 M 0.33 8.5 N 0.10 2.5 P 0.85 21.5 Q 0.98 25.0 R 0.11 2.8 SM 6 M 6 T 0.26 Dia. 6.5 Dia. U 0.02 0.5 V 0.62 15.85 Description: Pow erex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-24F is a 1200V (V CES ), 200 Ampere Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 200 24 K D C A EB S - NUTS (3 TYP) CM KK L R M J T (4 TYP.) PQ C2E1 Q CL N F H G H C2E1 RTC RTC TC MEASURING POINT U V

Trench Gate Design Dual IGBTMOD™

200 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DU-24F Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 200 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 400* Amperes Emitter Current (Tc = 25°C) I E 200 Amperes Peak Emitter Current I EM 400* Amperes Maximum Collector Dissipation (Tc = 25°C) P c 890 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb W eight – 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 40 µA Gate-Emitter Threshold Voltage V GE(th) IC = 20mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 200A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts IC = 200A, VGE = 15V, Tj = 125°C– 1.9 – Volts Total Gate Charge Q G VCC = 600V, IC = 200A, VGE = 15V – 2200 – nC Emitter-Collector Voltage** V EC IE = 200A, VGE = 0V – – 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 7 8 n f Output Capacitance C oes VCE = 10V , VGE = 0V – – 3.4 nf Reverse Transfer Capacitance C res –– 2 n f Inductive Turn-on Delay Time t d(on) VCC = 600V, IC = 200A, – – 300 ns Load Rise Time t r VGE1 = VGE2 = 15V, – – 80 ns Switch Turn-off Delay Time t d(off) R G = 1.6/H9024,– – 500 ns Times Fall Time t f Inductive Load – – 300 ns Diode Reverse Recovery Time t rr Switching Operation – – 200 ns Diode Reverse Recovery Charge Q rr IE = 200A – 12.2 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)QP er IGBT 1/2 Module, Tc Reference – 0.15 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)DP er FWDi 1/2 Module, Tc Reference – – 0.18 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, – 0.08 °C/W Tc Reference Point Under Chip Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.020 – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 30002500200015001000500 VCC = 400V VCC = 600V IC = 200A COLLECTOR CURRENT, I C , (AMPERES) 103 101 102 103 102 101 100 tr tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V 101 C ies C oes C res 0 1.0 2.0 3.0 4.0 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, I E, (AMPERES) GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 068 1 0 1 21 41 61 82 0 Tj = 25°C IC = 80A IC = 400A IC = 200A COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 100 200 300 400 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 01 234 VGE = 20V 9.5 Tj = 25oC 100 200 400 300 8.5 td(on) td(off) VCC = 600V VGE = ±15V R G = 1.6 Ω Tj = 125°C Inductive Load Tj = 25°C TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Per Unit Base R th(j-c) = 0.15°C/W (IGBT) R th(j-c) = 0.18°C/W (FWDi) Single Pulse T C = 25°C EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) 103 101 102 103 102 101 trr Irr 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) VCC = 600V VGE = ±15V R G = 1.6 Ω Tj = 25°C Inductive Load REVERSE RECOVERY CHARACTERISTICS (TYPICAL)