CM200DU-12NFH

CM200DU-12NFH POWEREX | Alldatasheet

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Dual IGBTMOD™ NFH-Series Module

200 Amperes/600 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 1Rev. 11/09 Outline Drawing and Circuit Diagram Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low VCE(sat) £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DU-12NFH is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 200 12 Dimensions Inches Millimeters A 3.70 94.0 B 1 .89 48.0 E 0.43 11 .0 F 0.16 4.0 G 0.71 18.0 H 0.51 13.0 J 0.53 13.5 K 0.91 23.0 L 0.83 21 .2 M 0.67 17 .0 Dimensions Inches Millimeters N 0.28 7 .0 P M5 Metric M5 Q 0.26 Dia. Dia. 6.5 R 0.02 4.0 S 0.94 24.0 T 0.3 7 .5 U 0.33 8.5 V 0.63 16.0 W 0.1 2.5 X 0.98 25.0 Y 0.47 12.0 Z 0.11 2.8 R C2E1 E2 C1 G2E2 C2E1 E2 C1 E1G1 TC MEASUREMENT POINT S T Z E G F F B A D KKM N Y J W V X V C W W W P - NUTS (3 TYP) Q - (2 TYP) H LABEL L U

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 2 Rev. 11/09 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DU-12NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 25°C) IC 200* Amperes Peak Collector Current ICM 400* Amperes Emitter Current** (TC = 25°C) IE 200* Amperes Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 590 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 830 Watts Mounting Torque, M5 Main Terminal — 30 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 20mA, VCE = 10V 5.0 6.0 7 .0 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 200A, VGE = 15V, Tj = 25°C — 2.0 2.7 Volts I C = 200A, VGE = 15V, Tj = 125°C — 1 .95 — Volts Total Gate Charge QG V CC = 300V, IC = 200A, VGE = 15V — 1240 — nC Emitter-Collector Voltage VEC I E = 100A, VGE = 0V — — 2.6 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 55 nf Output Capacitance Coes V CE = 10V, VGE = 0V — — 3.6 nf Reverse Transfer Capacitance Cres — — 2.0 nf Inductive Turn-on Delay Time t d(on) — — 250 ns Load Rise Time tr V CC = 300V, IC = 200A, — — 150 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, RG = 6.3Ω, — — 500 ns Time Fall Time tf Inductive Load Switching Operation, — — 150 ns Diode Reverse Recovery Time trr I E = 200A — — 150 ns Diode Reverse Recovery Charge** Qrr — 3.5 — µC * Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 3Rev. 11/09 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module, T C Reference — — 0.21 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/2 Module, T C Reference — — 0.35 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)'Q Per IGBT 1/2 Module, — — 0.15 °C/W T C Reference Point Under Chips Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.07 — °C/W External Gate Resistance RG 3.1 — 31 Ω COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-1 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 68 10 1412 16 18 20 Tj = 25°C Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 400A IC = 200A IC = 80A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 01 23 45 100 VGE = 20V 11 10 8.5 9.5 7.5 Tj = 25oC 200 300 400 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 1.5 1.0 2.0 0 100 300 2.5 0.5 400 VGE = 15V Tj = 25°C Tj = 125°C 200 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 101 102 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 td(off) td(on) tr tf VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 4 Rev. 11/09 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.21C/W (IGBT) R th(j-c) = 0.35C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 600 900300 18001200 1500 VCC = 300V VCC = 200V IC = 200A COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 101 102 100 10-1 VCC = 300V VGE = 15V RG = 6.3Ω Tj = 125C Inductive Load C Snubber at Bus 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) ESW(on) ESW(off) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 100 101 101 100 VCC = 300V VGE = 15V IC = 200A Tj = 125C Inductive Load C Snubber at Bus 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) ESW(on) ESW(off) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 101 102 100 10-1 VCC = 300V VGE = 15V RG = 6.3Ω Tj = 125C Inductive Load C Snubber at Bus 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) Err EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 VCC = 300V VGE = 15V RG = 6.3Ω Tj = 25C Inductive Load Irr trr GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 100 101 100 10-1 VCC = 300V VGE = 15V IE = 200A Tj = 125C Inductive Load C Snubber at Bus 102 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Err