CM200DU-12F

CM200DU-12F POWEREX | Alldatasheet

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Technical content

Dual IGBTMOD™

200 Amperes/600 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module con- sists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-con- nected super-fast recovery free- wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-12F is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 200 12 Dimensions Inches Millimeters A 3.70 94.0 B 1.89 48.0 E 0.43 11.0 F 0.16 4.0 G 0.71 18.0 H 0.02 0.5 J 0.53 13.5 K 0.91 23.0 L 0.83 21.2 M 0.67 17.0 Dimensions Inches Millimeters N 0.28 7.0 P M5 M5 Q Dia. 0.26 6.5 Dia. R 0.02 4.0 S 0.30 7.5 T 0.63 16.0 U 0.10 2.5 V 1.0 25.0 W 0.94 24.0 X 0.51 13.0 Y 0.47 12.0 Z 0.47 12.0 Q (2 PLACES) CM A B W C D R U U TVT K K P - NUTS (3 TYP) C2E1 E2 C1 X M N E F G F J Y L S H (4 PLACES) E2 G2G1 E1 TC MEASURED POINT C2E1 RTC RTC

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM200DU-12F Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) IC 200 Amperes Peak Collector Current ICM 400* Amperes Emitter Current (Tc = 25°C) IE 200 Amperes Peak Emitter Current IEM 400* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 590 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 20 μA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 200A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts I C = 200A, VGE = 15V, Tj = 125°C – 1.6 – Volts Total Gate Charge QG V CC = 300V, IC = 200A, VGE = 15V – 1240 – nC Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V – – 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies – – 54 nf Output Capacitance Coes VCE = 10V, VGE = 0V – – 3.6 nf Reverse Transfer Capacitance Cres – – 2 nf Inductive Turn-on Delay Time t d(on) VCC = 300V, IC = 200A, – – 120 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 100 ns Switch Turn-off Delay Time t d(off) RG = 3.1, – – 350 ns Times Fall Time tf Inductive Load – – 250 ns Diode Reverse Recovery Time trr Switching Operation – – 150 ns Diode Reverse Recovery Charge Qrr IE = 200A – 3.8 – μC Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module, T c Reference – 0.21 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/2 Module, T c Reference – – 0.35 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)'Q Per IGBT 1/2 Module, – 0.13 °C/W Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.045 – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE, VGE 600 1200 1800 VCC = 300V VCC = 200V IC = 200A EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 101 102 103 101 100 trr Irr 102 101 100 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 103 100 101 103102 102 101 100 td(off) td(on) tr VCC = 300V VGE = ±15V RG = 3.1 Ω Tj = 125°C Inductive Load tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE (TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V 101 Cies Coes 0 1.0 2.0 3.0 4.0 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 6 8 1 210 181614 20 Tj = 25°C IC = 80A IC = 400A IC = 200A COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 100 200 400300 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 1 2 3 4 Tj = 25oC 100 200 400 300 VGE = 20V 9.5 8.5 7.5 Cres Tj = 25°C TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Per Unit Base Rth(j-c) = 0.21°C/W (IGBT) Rth(j-c) = 0.35°C/W (FWDi) Single Pulse TC = 25°C VCC = 300V VGE = ±15V RG = 3.1 Ω Tj = 25°C Inductive Load