CM100DU-12F POWEREX | Alldatasheet

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Dual IGBTMOD™

100 Amperes /600 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.70 94.0 D 3.15 80.0 E 0.43 11.0 F 0.16 4.0 G 0.71 18.0 H 0.02 0.5 Dimensions Inches Millimeters J 0.53 13.5 K 0.91 23.0 L 1.13 28.7 M 0.67 17.0 N 0.28 7.0 P M5 M5 Q 0.26 Dia. 6.5 Dia. R 0.16 4.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100DU-12F is a 600V (V CES ), 100 Ampere Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 100 12 Q (2 PLACES) CM A B C D RK K C2E1 E2 C1 H M N E F G F J L E2G2 G1E1 C2E1 RTC RTC P - NUTS (3 PLACES) TC MEASURING POINT

Trench Gate Design Dual IGBTMOD™

100 Amperes/600 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM100DU-12F Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 600 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 100 Amperes Peak Collector Current I CM 200* Amperes Emitter Current (Tc = 25°C) I E 100 Amperes Peak Emitter Current I EM 200* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P c 350 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V –– 1m A Gate Leakage Current IGES VGE = VGE S, VCE = 0V – – 20 µA Gate-Emitter Threshold Voltage V GE(th) IC = 10mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 100A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts IC = 100A, VGE = 15V, Tj = 125°C – 1.6 – Volts Total Gate Charge Q G VCC = 300V , IC = 100A, VGE = 15V – 620 – nC Emitter-Collector Voltage** V EC IE = 100A, VGE = 0V –– 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 27 nf Output Capacitance C oes VCE = 10V, VGE = 0V –– 1.8 nf Reverse Transfer Capacitance C res –– 1n f Inductive Turn-on Delay Time t d(on) VCC = 300V, IC = 100A, –– 100 ns Load Rise Time t r VGE1 = VGE2 = 15V, –– 80 ns Switch Turn-off Delay Time t d(off) R G = 6.3/H9024, –– 300 ns Times Fall Time t f Inductive Load –– 250 ns Diode Reverse Recovery Time t rr Switching Operation –– 150 ns Diode Reverse Recovery Charge Q rr IE = 100A – 1.9 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module, T c Reference – 0.35 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/2 Module, T c Reference –– 0.70 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, – 0.23 °C/W Tc Reference Point Under Chip Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 200 400 600 1000 VCC = 300V 800 VCC = 200V IC = 100A EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 100 101 102 101 100 trr Irr 102 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C , (AMPERES) 103 100 101 103102 102 101 100 td(off) td(on) tr VCC = 300V VGE = ±15V R G = 6.3 Ω Tj = 125°C Inductive Load tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V 101 C ies C oes 0 1.0 2.0 3.0 4.0 100 101 102 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT, I E, (AMPERES) GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 068 1 2 10 18 1614 20 Tj = 25°C IC = 40A IC = 200A IC = 100A COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 40 80 120 160 200 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 01 2 34 Tj = 25oC 120 160 200 VGE = 20V 15 10 9.5 8.5 7.5 C res Tj = 25°C TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Per Unit Base R th(j-c) = 0.35°C/W (IGBT) R th(j-c) = 0.7°C/W (FWDi) Single Pulse T C = 25°C VCC = 300V VGE = ±15V R G = 6.3 Ω Tj = 25°C Inductive Load