CM1000HA-24H POWEREX | Alldatasheet

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Single IGBTMOD™ H-Series Module

1000 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.12 130.0 B 4.33 ±0.01 110.0 ±0.25 C 1.840 46.75 F 1.42 36.0 G 1.25 31.8 H 1.18 30.0 J 1.10 28.0 K 1.08 27.5 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: h Low Drive Power h Low V CE(sat) h Discrete Super-Fast Recovery (135ns) Free-Wheel Diode h High Frequency Operation (20-25kHz) h Isolated Baseplate for Easy Heat Sinking Applications: h AC Motor Control h Motion/Servo Control h UPS h Welding Power Supplies h Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1000HA-24H is a 1200V CES ), 1000 Ampere Single IGBTMOD™ Power Module. Type Current Rating V CES Amperes Volts (x 50) CM 1000 24 Dimensions Inches Millimeters L 0.79 20.0 M 0.77 19.5 N 0.75 19.0 P 0.61 15.6 Q 0.51 13.0 R 0.35 9.0 S M8 Metric M8 T 0.26 Dia. Dia. 6.5 U M4 Metric M4 DE E C E G H K R AB B A NF L M C J G P Q C U - M4 THD (2 TYP.) S - M8 THD (2 TYP.) T - DIA. (4 TYP.) E G E

Single IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM1000HA-24H Units Junction Temperature T j –40 to +150 °C Storage Temperature T stg –40 to +125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage V GES ±20 Volts Collector Current IC 1000 Amperes Peak Collector Current I CM 2000* Amperes Diode Forward Current I F 1000 Amperes Diode Forward Surge Current I FM 2000* Amperes Power Dissipation Pd 5800 Watts Max. Mounting Torque M8 Terminal Screws – 95 in-lb Max. Mounting Torque M6 Mounting Screws – 26 in-lb Module Weight (Typical) – 1600 Grams V Isolation VRMS 2500 Volts * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 6 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 100mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 1000A, VGE = 15V – 2.7 3.6 Volts IC = 1000A, VGE = 15V , Tj = 150°C – 2.4 – Volts Total Gate Charge Q G VCC = 600V, IC = 1000A, VGS = 15V – 5000 – nC Diode Forward Voltage V FM IE = 1000A, VGS = 0V – – 3.5 Volts Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – – 200 nF Output Capacitance C oes VGE = 0V , VCE = 10V , f = 1MHz – – 70 nF Reverse Transfer Capacitance C res – – 40 nF Resistive Turn-on Delay Time t d(on) – – 600 ns Load Rise Time t r VCC = 600V , IC = 1000A, – – 1500 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 3.3Ω – – 1200 ns Time Fall Time t f – – 350 ns Diode Reverse Recovery Time t rr IE = 1000A, diE/dt = –2000A/µs – – 250 ns Diode Reverse Recovery Charge Q rr IE = 1000A, diE/dt = –2000A/µs – 7.4 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.022 °C/W Thermal Resistance, Junction to Case R th(j-c) Per FWDi – – 0.050 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.018 °C/W

Single IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 VCE , (VOLTS) IC , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 2000 02468 1 0 1600 1200 800 400 Tj = 25°C VGE = 20V VGE , (VOLTS) IC , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 2000 048 1 2 1 6 2 0 1600 1200 800 400 IC , (AMPERES) VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 400 800 1200 2000 VGE = 15V Tj = 25°C Tj = 125°C 1600 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 400A IC = 2000A IC = 1000A 101 VEC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 104 IE, (AMPERES) Tj = 25°C 103 VCE , (VOLTS) C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 103 102 101 100 VGE = 0V 101 C ies C oes C res IE, (AMPERES) trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) Irr, (AMPERES) trr Irr di/dt = -2000A/µsec Tj = 25°C 103 101 103 104 102 101 103 102 101 102 Q G , (nC) VGE , (VOLTS) GATE CHARGE, V GE (TYPICAL) 0 2000 4000 6000 8000 VCC = 600V VCC = 400V VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR CURRENT, I C , (AMPERES) 101 102 103 104 102 103 101 td(off) td(on) tr VCC = 600V VGE = ±15V R G = 3.3 Ω Tj = 125°C tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)

Single IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.05°C/W Zth = R th

  • (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.022°C/W Zth = R th
  • (NORMALIZED VALUE) 10-1 10-2 10-3