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Dual IGBTMOD™

1000 Amperes/1700 Volts

107/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Outline Drawing and Circuit Diagram A DP (8 PLACES) L L MH H HHH H K GU H H E F F C2E1 G2 E1 E2 G1 V BB CC BC J J G G R (9 PLACES) C2E1 LABEL U W S N X YZ AA T Description: Powerex Mega Power Dual (MPD) Modules are designed for use in switching applications. Each module consists of two IGBT Transistors having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heatsinking £ RoHS Compliant Applications: £ High Power DC Power Supply £ Large DC Motor Drives £ Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM1000DUC-24NF is a 1700V (VCES), 1000 Ampere Dual IGBTMOD Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 1000 34 Dimensions Inches Millimeters N 0.47 12.0 P 0.26 6.5 R M6 Metric M6 S 0.08 2.0 T 0.99 25.1 U 0.62 15.7 V 0.71 18.0 W 0.75 19.0 X 0.43 11 .0 Y 0.83 21 .0 Z 0.41 10.5 AA 0.22 5.5 Dimensions Inches Millimeters A 5.91 150.0 B 5.10 129.5 E 6.54 166.0 G 1 .65 42.0 H 0.55 14.0 K 0.16 4.0 BB = VHR-2N CC = VHR-5N

Mega Power Dual IGBTMOD™ 2 07/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM1000DUC-34NF Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg *7 -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1700 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current DC (TC = 104°C)*2 I C 1000 Amperes Peak Collector Current (Pulse, Repetitive)*3 ICRM 2000 Amperes Total Power Dissipation (TC = 25°C)*2,*4 P tot 8925 Watts Emitter Current, FWDi (TC = 25°C)*2,*4 I E *1 1000 Amperes Peak Emitter Current, FWDi (Pulse, Repetitive)*3 I ERM *1 2000 Amperes Main terminals Mounting Torque, M6 Screw – 40 in-lb (max.) Mounting to Heatsink Mounting Torque, M6 Screw – 40 in-lb (max.) Weight (Typical) – 1450 Grams Flatness to Baseplate (On Centerline X, Y1, Y2)*8 e c -50 to 100 µm Isolation Voltage (Main Terminal to Baseplate, RMS, f = 60Hz,AC 1 min.) V iso 3500 Volts *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *7 The operation temperature is restrained by the permission temperature of female connector housing. *8 Baseplate flatness measurement point is as in the following figure. X BOTTOM – CONCAVE + CONVEX – CONCAVE + CONVEX BOTTOM BOTTOM LABEL SIDE 39 mm 39 mm

Mega Power Dual IGBTMOD™ 307/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES V GE = VGES, VCE = 0V – – 5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 100mA, VCE = 10V 6 7 8 Volts Collector-Emitter Saturation Voltage (Chip) V CE(sat) I C = 1000A, VGE = 15V, Tj = 25°C*5 – 2.2 2.85 Volts (Without Lead Resistance) I C = 1000A, VGE = 15V, Tj = 125°C*5 – 2.45 – Volts Input Capacitance Cies – – 220 nF Output Capacitance Coes V CE = 10V, VGE = 0V – – 25 nF Reverse Transfer Capacitance Cres – – 4.7 nF Total Gate Charge QG V CC = 1000V, IC = 1000A, VGE = 15V – 6000 – nC Inductive Turn-on Delay Time t d(on) V CC = 1000V, IC = 1000A, – – 600 ns Load Rise Time tr V GE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time t d(off) R G = 0.47Ω, Inductive Load – – 1000 ns Times Fall Time tf Switching Operation – – 300 ns Emitter-Collector Voltage (Chip) VEC *1 I E = 1000A, VGE = 0V*5 – 2.3 3 Volts (Without Lead resistance) Reverse Recovery Time trr *1 V CC = 1000V, IE = 1000A, VGE = ±15V, – – 500 ns Reverse Recovery Charge Qrr *1 R G = 0.47Ω, Inductive Load – 90 – µC Turn-on Switching Energy Per Pulse Eon V CC = 1000V, IC = IE = 1000A, – 272.4 – mJ Turn-off Switching Energy Per Pulse Eoff V GE = 15V, RG = 0.47Ω, – 250.2 – mJ Reverse Recovery Energy Per Pulse Err *1 T j = 125°C, Inductive Load – 172.4 – mJ Internal Lead Resistance R(lead) Main Terminals-Chip, Per Switch, – 0.286 – mΩ T j = 25°C*2 Internal Gate Resistance rg Per Switch – 0.67 – Ω Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*2 R th(j-c)Q Per IGBT – – 0.014 °C/W Thermal Resistance, Junction to Case*2 R th(j-c)D Per Clamp Diode – – 0.023 °C/W Contact Thermal Resistance, Rth(c-f) Per 1/2 Module – 0.012 – °C/W Case to Heatsink*2 Thermal Grease Applied*6 Recommended Operating Conditions, Ta = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units DC Supply Voltage R th(j-c)Q V CC Applied Across C1-E2 – 1000 1100 Volts Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1/G2-Es2 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 0.47 – 4.7 Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).

Mega Power Dual IGBTMOD™ 4 07/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 10-1 100 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 104 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 12 14 16 18 20 Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 400 2000800 1200 1600 VGE = 15V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 1000A IC = 2000A IC = 400A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 10 VGE = 20V Tj = 25°C 1200 800 400 1600 2000 10-1 COLLECTOR CURRENT, IC, (AMPERES) 104 103 102 103 102 101 104 103 102 101 SWITCHING TIME, (ns) td(off) td(on) tr VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 125°C Inductive Load tf EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) 104 102 103 103 102 104 103 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) trr Irr VCC = 1000V VGE = ±15V RG = 0.47Ω Tj = 25°C Inductive Load 104 104 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) EXTERNAL GATE RESISTANCE, RG, (Ω) 10-1 100 SWITCHING TIME, (ns) td(off) td(on) tr VCC = 1000V VGE = ±15V IC = 1000A Tj = 125°C Inductive Load tf 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 2000 10000800060004000 VCC = 1000V VCC = 800V IC = 1000A Tj = 25°C GATE CHARGE, VGE

Mega Power Dual IGBTMOD™ 507/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com EMITTER CURRENT, IE, (AMPERES) 10-1 100 101 10-1 100 101 VCC = 1000V VGE = ±15V Tj = 125°C RG = 0.47Ω Inductive Load COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 102 103 104 101 102 103 102 103 104 101 102 103 101 102 104 103 101 102 104 103 VCC = 1000V VGE = ±15V Tj = 125°C RG = 0.47Ω Eon Eoff Inductive Load GATE RESISTANCE, RG, (Ω) VCC = 1000V VGE = ±15V Tj = 125°C IC = 1000A Inductive Load GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) VCC = 1000V VGE = ±15V Tj = 125°C IC = 1000A Eon Eoff Inductive Load SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY ENERGY VS. FORWARD CURRENT (TYPICAL) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS, Err, (mJ/PULSE) REVERSE RECOVERY ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) SWITCHING ENERGY VS. EXTERNAL GATE RESISTANCE (TYPICAL) TIME, (s) 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & CLAMP DIODE) 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Single Pulse TC = 25°C Per Unit Base R th(j-c') = 0.014°C/W (IGBT) R th(j-c') = 0.023°C/W (Clamp)