CLY5

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Applications

• Test and Measurement Equipment
• Defense Communications
• General Purpose Wireless Product Features
• 400 – 2500 MHz Operating Range
• Wide Operating Voltage Range: +2.7 V to +6 V
• POUT=+26.5 dBm at VD=+3 V, f=1.8 GHz
• High Efficiency: >55 % General Description The CLY5 is a high -breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. Excellent linearity and easy impedance matching make this device an ideal choice for portable PA applications in mobile phones and WLAN transceivers. The CLY5 provides +26.5 dBm output power, with an associated gain of 9.5 dB, at 1.8 GHz and V DS=+3 V. Power added efficiencies to 55% are achievable. The CLY5 is housed in an industry-standard lead- free / green / RoHS-compliant SOT-223 package.

4 Pin SOT-223 Package

Ordering Information

Part No. Description CLY5 High Power GaAs FET Standard T/R size = 1000 pieces on a 13” reel. Pin Configuration Pin No. Label

1 Gate

2, 4 Source

3 Drain

Datasheet: Rev G 08-29-14 - 1 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

Recommended Operating Conditions Parameter Min Typ Max Units TCASE −40 +85 °C TJ (for >106 hours MTTF) +150 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Absolute Maximum Ratings Parameter Rating Storage Temperature (TSTG) −55 to 150°C Drain-source voltage (VDS) +9 V Drain-gate voltage (VDG) +12 V Gate-source voltage (VGS) −6 V Drain current (ID) 1.2 A Pulse peak power (PPULSE) 9 W Total power dissipation (PTOT) (Ts < 80 °C), Ts: Temperature at soldering point 2 W Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: TA=+25°C, Freq.=1.8 GHz Parameter Symbol Conditions Min Typ Max Units Drain-Source Saturation Current IDSS VDS = +3 V, VGS = 0 V 600 800 1000 mA Drain-Source Pinch-Off Current ID VDS = +3 V, VGS = −3.8 V - 10 100 µA Gate Pinch-Off Current IG VDS = +3 V, VGS = −3.8 V - 5 20 µA Pinch-Off Voltage VGS(p) VDS = +3 V, ID = 100 µA -3.8 -2.8 -1.8 V Small Signal Gain (1) G VDS = +3 V, ID = 350 mA, PIN = 0 dBm 10.5 11.0 - dB VDS = +5 V, ID = 350 mA, Pin = 0 dBm 11.5 12.0 - dB Small Signal Gain (2) Gp VDS = +3 V, ID = 350 mA, Pin = 0 dBm 9.0 9.5 - dB Output Power Po VDS = +3 V, ID = 350 mA, Pin = +19 dBm +26.5 +27 - dBm VDS = +5 V, ID = 350 mA, Pin = +21 dBm +29.5 +30 - dBm 1dB-Compression Point P1dB VDS = +3 V, ID = 350 mA - +26.5 - dBm VDS = +5 V, ID = 350 mA - +30 - dBm Power Added Efficiency PAE VDS = +5 V, ID = 350 mA, Pin = +21 dBm 40 55 - % Noise figure NF VDS = +5 V, ID = 350 mA 1.72 dB Thermal Resistance Rth Channel-soldering point 35 °C/W Notes: 1. Matching conditions for maximum small signal gain (not identical with power matching conditions!) Datasheet: Rev G 08-29-14 - 2 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

Common Source S-Parameters ( VDS = +3 V ) Test conditions unless otherwise noted: VDS = +3 V, ID = 350 mA (typ.), Temp. = +25 °C, 50 Ohm system Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Noise Parameters ( VDS = +3 V ) Test conditions unless otherwise noted: VDS = +3 V, ID = 350 mA (typ.), Temp. = +25 °C, 50 Ohm system Freq (MHz) NFmin (dB) MagOpt (mag) AngOpt (deg) Rn (Ω) rn 900 0.92 0.408 142 3.9 0.79 1800 1.72 0.664 -134 8.1 0.162 Datasheet: Rev G 08-29-14 - 3 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

Common Source S-Parameters ( VDS = +5 V ) Test conditions unless otherwise noted: VDS = +5 V, ID = 350 mA (typ.), Temp. = +25 °C, 50 Ohm system Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Noise Parameters ( VDS = +5 V ) Test conditions unless otherwise noted: VDS = +5 V, ID = 350 mA (typ.), Temp. = +25 °C, 50 Ohm system Freq (MHz) NFmin (dB) MagOpt (mag) AngOpt (deg) Rn (Ω) rn 900 1.05 0.369 139 4.9 0.097 1800 1.94 0.603 −132 10.9 0.218 Datasheet: Rev G 08-29-14 - 4 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

Test conditions unless otherwise noted: ID=350 mA (typ.), Freq.=1800 MHz, Temp=+25°C 1 2 3 4 5 6 7 8 PAE (%) P1dB (dBm) Drain-Source Voltage (V) P1dB & PAE vs. Drain-Source Voltage P1dB PAE 0.0 0.4 0.8 1.2 1.6 2.0 1 2 3 4 5 6 7 8 Gain (dB) P1dB (W) Drain-Source Voltage (V) P1dB & Gain vs. Drain-Source Voltage P1dB Gain 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 PTOTAL (W) Drain Current (ma) Drain-Source Voltage (V) I-V Characteristics VG0 VGp5 VG1 VG1p5 VG2 Ptot Temp.=+25°C Datasheet: Rev G 08-29-14 - 5 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

Ptot = f(Ts) Ptot 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 [W] 0 50 100 150 Ts C O Permissible Pulse Load Ptotmax/PtotDC = f(tp) Datasheet: Rev G 08-29-14 - 6 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

Increased Power Handling Capability – Pulsed Applications 577µs 4,615ms GSM/PCN TDMA-Frame: 125.0 4.615ms ms577.0 T t = D p Take value P P tot tot max DC from diagram permissible pulse load --> 1.4 P P DC max tot tot W2.8 = 1.4 W 2 = Ptot × 417µs 10ms DECT TDMA-Frame: 0417.0 4.615ms ms10 T t = D p Take value P P tot tot max DC from diagram permissible pulse load --> 1.5 P P DC max tot tot W3 = 1.5 W 2 = Ptot × Datasheet: Rev G 08-29-14 - 7 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

Package Marking and Dimensions Marking Part Identifier: CLY5 Lot Code: XXXX Date Code: YYWW NOTES: 1. All dimensions are in millimeters. Angles are in degrees Datasheet: Rev G 08-29-14 - 8 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com

Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device Solderability Compatible with both lead -free (260 °C max. reflow temperature) and tin/lead (245 °C max. reflow temperature) soldering processes. Package contact plating: NiPdAu RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Res trictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free MSL Rating MSL Rating: Level 3 Test: 260°C convection reflow Standard: JEDEC Standard IPC/JEDEC J-STD-020 Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Email: info-sales@tqs.com Fax: +1.503.615.8902 For technical questions and application information: Email: sjcapplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained here in. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is p rovided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant in formation before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether w ith regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life -saving, or life - sustaining applications, or other applications where a fail ure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev G 08-29-14 - 9 of 9 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com