CL5822 MICRO-ELECTRONICS | Alldatasheet
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CL5822 is silicon planar transistors 04,6800.18) for use in AF drivers and outputs, as — 4 well as for universal applications. 4 «o104-@ | ey 1 | 358 -— a as co.14> i. LE ties] f iva | Wald BOTTOM VIEW icy) LE “1 0.45¢0.018) ABSOLUTE MAXIMUM RATINGS UNITS MIGINCH> Collector-Emitter Voltage (Ip=0) Veo 60V Collector-Emitter Voltage (Vep=0) Voces 70V Emitter-Base Voltage VEBo 5v Collector Current Io 1A Continuous Power Dissipation Pa 625mW Operating & Storage Junction Temperature Vag -55 to +150°C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER [SYMBOL| MIN MAX | UNIT | CONDITIONS \\Collector-Emitter Breakdown Voltage LVcrox 60 Vv i=10mA 1,=0 Collector-Emitter Breakdown Voltage BVces 70 Vo =0.01mA —-Vgp=0 Collector Cutoff Current Icpo 100 nA Vcp=25V 1=0 Emtter Cutoff Current Isso 10 pA Vgp=5V- 1-0 D.C. Current Gain Hype | 100 200 1p=2mA. Vog=2V 25 he-sooma Voe=2V Base-Emitter Voltage Veer Ll Vv c=500mAVce=2V Collector-Emitter Saturation Voltage Vegisayt 0.75 Vi 1g=500mA ss Ig=5O0mA Base-Emitter Saturation Voltage Vee (sat)* | 1.2 V = -1.=500mA Ip=50mA Output Capacitance Co | 15 pF ‘Veg=10V 1-0 | f1MHz Current Gain-Bandwidth Product fr 140 TYP = MHz |i=50mA Voe=2V * Pulse test : pulse width <300pS, duty cycle < 2%. MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong. et