CL5770 MICRO-ELECTRONICS | Alldatasheet
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94.68 DESCRIPTION 7) (0.18) 7 TO-92A CL5770 is NPN silicon planar ' ee epitaxial transistor designed for small (015) o- Fa aon (ote) signal high frequency amplifiers and t— Soh tht | I}|| toh [ 2.54 12.7 iH (002) iow” ee) TP. Bottom view min. | i| i} | Unit: mm(inch) ud JL 045 ABSOLUTE MAXIMUM RATINGS (0.018) Collector-Base Voltage VCBO 30V Collector-Emitter Voltage VCEO 15V Emitter-Base Voltage VEBO 3V Collector Current Ic 50mA Total Power Dissipation Ptot 300mW Operating Junction & Storage Temperature Tj, Tstg -55 to +150°C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL | MIN MAX CONDITIONS Collector-Base Breakdown Voltage BVCBO 30 Vv IC=0.lmA IE=0 Collector-Emitter Breakdown Voltage LVCEO* 15 Vv sIC=3mA IB=0 Emitter-Base Breakdown Voltage BVEBO 3 Vv {IE=0.0lmA_ 1C=0 Collector Cutoff Current ICBO 10 nA jVCB=15V_ IE=0 D.C. Current Gain HFE* 60 120 1C=3mA © VCE=1V Collector-Emitter Saturation Voltage VCE(sat) 0.4 Vv 1C=10mA IB=ImA Base-Emitter Saturation Voltage VBE(sat) 1 Vv IC=10mA IB=ImA Gain Bandwidth Product fT 800 TYP | MHz |IC=8mA VCE=10V f=100MHz Output Capacitance Cob 17 pF |VCB=10V f=IMHZ Input Capacitance Cib 2 pF {VEB=0.5V f=1MHZ Noise Figure NF 6 dB {IC=I1mA VCE=6V IRG=4000hm f+60MHZ * Pulse test : pulse width <300pS, duty cycle < 2%. MICRO ELECTRONICS LTD. : 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong.