CL2102 MICRO-ELECTRONICS | Alldatasheet
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Technical content
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DESCRIPTION
CL2102 is planar transistor use for in TanSeOrePULL PACK AF medium power drivers and Paice outputs and switching applications. Wyte hie TT . ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 120V Collector-Emitter Voltage VCEO 65V Emitter-Base Voltage VEBO TV Collector Current IC 1A Total Power Dissipation Ptot 1W Operating Junction & Storage Temperature Tj, Tstg -55 to +150°C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) Collector-Base Breakdown Voltage BVCBO 120 Vv fIC=0.1mA_ IE=0 Collector-Emitter Breakdown Voltage LVCEO* 65 1C=10mA = IB=0 Emitter-Base Breakdown Voltage BVEBO 7 IC=0.lmA IC=0 Collector Cutoff Current ICBO 2 VCB=60V IE=0 Emitter Cutoff Current IEBO 5 VEB=5V-° -IC=0 D.C. Current Gain HFE* 20 IC=0.lmA VCE=10V
35 IC=10mA VCE=10V
40 120 IC=150mA VCE=10V 25 1C=500mA VCE=10V 10 IC=1A. VCE=10V Collector-Emitter Saturation Voltage VCE(sat)* 0.5 Vv IC=150mA IB=1SmA Base-Emitter Saturation Voltage VBE(sat)* Ll Vs fIC=150mA_ IB=1SmA Gain Bandwidth Product fT 60 MHz |IC=50mA VCE=10V f=20MHz Output Capacitance Cob 10 pF |VCB=10V fiMHZ Input Capacitance Cib 80 pF |VEB=0.5V__f=1MHZ . * Pulse test : pulse width <300pS, duty cycle < 2%. | ME MICRO ELECTRONICS LTD. . 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong.