CL055 MICRO-ELECTRONICS | Alldatasheet
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0 ~vEO oa THE CLOSS (PNP) AND CLOG6 (NPN) ARE SILICON CASE TO-924 PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR 1-WATT AUDIO AMPLIFIER OUTPUT AND SWITCHING APPLICATIONS. THEY FEATURE LOW COLLECTOR-EMITTER KNEE VOLTAGE AND GOOD LINE- ARITY OF D.C. CURRENT GAIN. EBC ABSOLUTE MAXIMUM RATINGS Forono onion, volte snd current vain we negtive Collector-Base Voltage VoBO 25v Collector-Emitter Voltage YoEO 20v Enitter-Base Voltage VEBO sv Collector Current Ic dA Collector Peak Current (t<50mS) ICM 1.54 Total Power Dissipation @ Tc4<25°C Ptot 1.50 Without Heat Sink @ Ta25°C 625mW Operating Junction & Storage Temperature 1, Tatg -55 to 150°C ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) PARTE [ammo | an ser vax [unit] seo covaniow Collector-Base Breakdown Voltage BYCBO 25 ; v Ic=100pA Te Collector-Emitter Breakdown Voltage | LVcEO * 20 v Ical0mA IB=O Collector-Emitter Cutoff Current Ices 0.5 | pa | VcE=20V VBE=0 Enitter-Base Cutoff Current TEBO 1.0} pa | VeBe5V Ic=0 Collector-Bmitter Knee Voltage VorK 0.25 0.5 | Vv Ice0.2h Ypevalue at which I¢=0.22 Voge1¥ Collector-Bnitter Saturation Voltege| VcE(sat)* 0.21 0.4] V Ic=0.5A Ip=0.05) Base-Bnitter Voltage Yar * 0.87 1.2 | Vv Ic=0.5A Vog=1V D.C. Current Gain (Note) | Bre 1 * 50 160 360 Ign0.1A Vogs1¥ Hrs 2* |. 20 80 IcelA Vog=2¥ Current Gain-Bendwidth Product fr 120 waz | Ic=50mA VcE=10V Note 1 HFE 1 16 classified as follows. Group A 1 50-100 Group Bs 80-160 Group C 1 120-240 Group D 1 180-360 * Pulse Test 1 Pulse Width=0.3mS, Duty Cycle=1% MICRO ELECTRONICS LID. 2 #+#pR25] 38, Hung To Road, Microtron Building, Kwun Tong, Kowloon, Hong Kong. | a rr