CHT3019PT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Switching Transistor VOLTAGE 80 Volts CURRENT 1 Ampere APPLICATION FEATURE * Suitable for high packing density. CONSTRUCTION * NPN Switching Transistor * Telephony and proferssional communction equipment. * Other switching applications. 2004-9 * High saturation current capability. * Voltage controlled small signal switch. CIRCUIT LIM ITIN G VA LU ES In accordance w ith the Absolute M axim um R ating System (IEC 60134). N ote 1. Transistor m ounted on an FR 4 printed-circuit board. SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT VC BO collector-base voltage open em itter − 120 V VC EO collector-em itter voltage open base − 80 V VVEBO em itter-base voltage open collector − 7.0 IC collector current (D C ) − 1000 mA IC M peak collector current − 1500 mA Ptot total pow er dissipation Tamb ≤ 25 °C; note 1 − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tam b operating am bient tem perature −65 +150 °C MARKING SOT-23 * Small surface mounting type. (SOT-23) * HT .119 (3.04) .007 (0.177) .002 (0.05) .110 (2.80) .103 (2.64) .028 (0.70) .020 (0.50) .055 (1.40) .047 (1.20) .045 (1.15) .033 (0.85) .086 (2.20) .082 (2.10) .041 (1.05) .019 (0.50) .018 (0.30) .033 (0.85) .066 (1.70) (1) (2) (3) Dimensions in inches and (millimeters) SOT-23
TH ER M A L C H A R AC TER ISTIC S N ote 1. Transistor m ounted on an FR 4 printed-circuit board. C H A R AC TER ISTIC S Tam b = 25 °C unless otherw ise speciÞed. SYM B O L PA R A M ETER C O N D ITIO N S VA LU E U N IT R th j-a therm al resistance from junction to am bient note 1 357 K/W SYM B O L PA R A M ETER C O N D ITIO N S M IN . M A X. U N IT IC BO collector cut-off current IE = 0; VC B = 90 V − 10 nA IEBO emitter cut-off current IC = 0; VEB =5V − 10 nA IC = 1.0 mA; VCE = 10V IC = 150 mA; VCE =10V 90hFE D C current gain I C = 0.1 mA; VCE 50 IC = 500 mA; VCE = 10V 50 VC Esat collector-em itter saturation voltage IC = 150 mA; IB = 15 mA − 0.2 V IC =-500 mA; IB = 50 mA − 0.5 V VBEsat base-emitter saturation voltage IC =150 mA; IB =15 mA 1.1 V C ob collector capacitance IE =ie = 0; VCB =10V ; f=1M H z 12 C em itter capacitance IC = ic = 0; VBE = 500 mV ; f= 1 M H z − 60 pF pF fT transition frequency IC = 50 mA; VCE = 10V ; f = 1.0 MHz 100 − MHz RATING CHARACTERISTIC CURVES ( CHT3019PT ) = 10V ib F noise Þgure IC = 100 µA; VCE =10V ; RS =1k Ω ; f = 1.0kHz − dB4.0 IC = 1.0 A; VCE = 10V 15 100 300