CHM13N07PAPT CHENMKO | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 Ampere APPLICATION FEATURE * Super high dense cell design for extremely low R DS(ON) . CONSTRUCTION * N-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2006-02 * High power and current handing capability. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHM13N07PAPT Units VDSS Drain-Source Voltage 70 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation at Tc = 25 28 W TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 50 °C/W (Note 3) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% * Small package. (TO-252A) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting CIRCUIT S D G(1) (2) (3) TO-252A TO-252ADimensions in inches and (millimeters) .220 (5.59) .195 (4.95) .417 (10.6) .346 (8.80)

1 Gate

3 Drain( Heat Sink )

2 Source

.28 0 (7.10) .238 (6.05) .261 (6.63) .213 (5.40) .035 (0.90) .025 (0.64) .102 (2.59 ) .078 (1.98) .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) .024 (0.61) .016 (0.40) (3) (2)(1)

RATING CHARACTERISTIC CURVES ( CHM13N07PAPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS gFS Forward Transconductance VDS =25V, ID = 5.5A RDS(ON) Static Drain-Source On-Resistance SWITCHING CHARACTERISTICS Qgs Gate-Source Charge Qgd Gate-Drain Charge ton Turn-On Time nS VDD = 30V ID = 6.8A, VGS = 5 V tr Rise Time 25 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA nA 70 V nA I GSSF DSS S Zero Gate Voltage Drain Current I VDS Gate-Body Leakage Gate-Body Leakage 60 V, V V GS GS 20V, = 0 V VDS µ = 0 V A +100 -100VGS = -20V, VDS = 0 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 V tf Fall Time 20 Qg Total Gate Charge 2.3 VDS=48V, ID=13.6A VGS=5V Turn-Off Timetoff RGEN= 25 Ω (Note 2) (Note 4) 2.5 S nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 5.5 I VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 11A, VGS = 0 V 1.5 A V (Note 1) (Note 2) 2.1 6.4 I GSSR 127 mΩ VGS=10V, ID=5.5A VGS=5.0V, ID=5.5A 106 127 153