CHM1710PAPT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CURRENT 17 Ampere APPLICATION FEATURE * Super high dense cell design for extremely low R DS(ON) . CONSTRUCTION * N-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. °C/W 2007-05 (Note 3) * High power and current handing capability. Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% Absolute Maximum Ratings TA = 25°C unless otherwise noted * Small package. (TO-252A) Symbol T Parameter CHM1710PAPT J Units V Operating Temperature Range DSS -55 to 150 Drain-Source Voltage 100 3. Repetitive Rating , Pulse width linited by maximum junction temperature V (Note 1) 4. Guaranteed by design , not subject to production trsting CIRCUIT VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation at Tc = 25 50 S W D T G STG Storage Temperature Range (1) -55 to 150 (2) (3) Thermal characteristics R TO-252A θ TO-252A JA Dimensions in inches and (millimeters) Thermal Resistance, Junction-to-Ambient 50 .220 (5.59) .195 (4.95) .417 (10.6) .346 (8.80)

1 Gate

3 Drain( Heat Sink )

2 Source

.28 0 (7.10) .238 (6.05) .261 (6.63) .213 (5.40) .035 (0.90) .025 (0.64) .102 (2.59 ) .078 (1.98) .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) .024 (0.61) .016 (0.40) (3) (2)(1)

RATING CHARACTERISTIC CURVES ( CHM1710PAPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage ON CHARACTERISTICS V g GS = 0 V, I FS D Forward Transconductance V DS = 250 µA nA =2.5V 100 V , I nA D I GSSF = 15A DSS S Zero Gate Voltage Drain Current R I DS(ON) V Static Drain-Source On-Resistance DS Gate-Body Leakage Gate-Body Leakage 100 V, V V GS GS 20V, = 0 V V SWITCHING DS CHARACTERISTICS µ = 0 V A +100 -100VGS Qgs Gate-Source Charge -20V, VDS = 0 V Qgd Gate-Drain Charge ton Turn-On Time nS V V DD GS = 50V (th) I Gate Threshold Voltage D V =19A DS V = V G GS S = 10 V , I D t = 250 µA r Rise Time 100 V tf Fall Time 140 Qg Total Gate Charge 16.2 VDS=80V, ID=19A VGS=10V Turn-Off Timetoff RGEN= 25 Ω (Note 2) (Note 4) S nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 15A, VGS = 0 V 1.5 A V 3.3 I GSSR 85 mΩVGS=10V, ID=15A 65