CHM2030JPT CHENMKO | Alldatasheet
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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts CURRENT 6 Ampere APPLICATION FEATURE * Super high dense cell design for extremely low R DS(ON) . CONSTRUCTION * N-Channel & P-Channel Enhancement in the package * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2006-02 * Lead free product is acquired. * High power and current handing capability. CIRCUIT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter N-Channel Units VDSS Drain-Source Voltage V VGSS Gate-Source Voltage ± V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation 2000 mW TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W (Note 3) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% Dimensions in millimeters SO-8 * Small flat package. (SO-8 ) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting SO-8 1.27 (0.05)BSC .51 (0.02 0 ) .10 (0.012) .25 (0.010) .17 (0.007) 4.06 (0.160) 3.70 (0.146) 5.00 (0.197) 4.69 (0.185) 1.75 (0.069) 1.35 (0.053) 6.20 (0.244) 5.80 (0.228) .25 (0.010) .05 (0.002) S1 S2 D1D1 G1 G2 D2D2 P-channel: VOLTAGE 2 0 Volts CURRENT 4.3 Ampere -4.3 -17 P-Channel -20
RATING CHARACTERISTIC CURVES ( CHM2030JPT ) N-Channel Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS gFS Forward Transconductance VDS =10V, ID = 6A RDS(ON) Static Drain-Source On-Resistance mΩ VGS=4.5V, ID=6A SWITCHING CHARACTERISTICS Qgs Gate-Source Charge Qgd Gate-Drain Charge ton Turn-On Time nS VDD = 10V ID = 1.0A, VGS = 4.5 V tr Rise Time 28 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA nA 20 V nA I GSSF DSS S Zero Gate Voltage Drain Current I VDS Gate-Body Leakage Gate-Body Leakage 20 V, V V GS GS 12V, = 0 V VDS µ = 0 V A +100 -100VGS = -12V, VDS = 0 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.5 V VGS=2.5V, ID=5.2A tf Fall Time 22 Qg Total Gate Charge VDS=10V, ID=6A VGS=4.5V Turn-Off Timetoff RGEN= 6 Ω (Note 2) (Note 4) nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 1.7A, VGS = 0 V 1.7 1.2 A V (Note 1) (Note 2) 4.5 I GSSR 7 S
RATING CHARACTERISTIC CURVES ( CHM2030JPT ) P-Channel Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage V ON CHARACTERISTICS GS g = 0 V, ID FS Forward Transconductance V = -250 µA DS nA -20 = -16V V nA , I I D DSS S = -2.2A Zero Gate Voltage Drain Current I R V DS(ON) DS Static Drain-Source On-Resistance Gate-Body Leakage mΩ VGS=-4.5V, ID=-2.2A Gate-Body Leakage -16 V, V V GS GS 12V, = 0 V VDS µ = 0 V SWITCHING A CHARACTERISTICS +100 -100VGS = -12V, V Qgs DS Gate-Source Charge = 0 V Qgd Gate-Drain Charge ton V Turn-On Time GS nS (th) V Gate Threshold Voltage DD V = -10V DS I D = V = -2.2A GS , I V D G = -250 µA S = -4.5 V tr Rise Time -0.6 V VGS=-2.5V, ID=-1.8A 106 tf Fall Time 78 Qg Total Gate Charge VDS=-6V, ID=-2.2A VGS=-4.5V Turn-Off Timetoff RGEN= 6 Ω (Note 2) (Note 4) nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS 19.4 25 VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = -1.8A, VGS = 0 V -2.5 -1.0 A V (Note 1) (Note 2) 120 GSSF I I GSSR 4 S