DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
- Low Noise figure and high associated gain for high IP3 receiver stages up to 4 GHz
- NF = 0.50dB; Ga = 17 dB @ 3V, 30 mA f = 1.8 GHz
- Low cost miniature package SC70
- LG = 0.4µm; WG = 800µm
Applications
- PCS CDMA and UMTS Receivers
- WLAN Multicarrier Receivers
- Basestations Package Style Pin assignment: 1 = gate 2 = source 3 = drain 4 = source
Low-Noise, High-Linearity Packaged pHEMT FET For additional information and latest specifications, see our website: www.triquint.com Revision H, October 10, 2012 Absolute Maximum Ratings Symbol Parameter Absolute Maximum Value Units VDS Drain-Source Voltage 5.5 V VDG Drain-Gate Voltage 6.5 V VGS Gate-Source Voltage -2.0 V ID Drain Current 160 mA TCH Channel Temperature +150 °C TSG Storage Temperature -65 to +150 °C PTOT Total Power Dissipation (TS </= 80.7°C)1 350 mW Thermal Resistance RthChS Channel-soldering point source 198 K/W Notes: 1) TS: Temperature measured on the source lead at the soldering point to the PCB. Electrical Specifications Symbol Parameter Conditions Min. Typ/Nom Max. Units IDSS Drain-Source Saturation Current VDS = 3V; VGS = 0V 0 80 140 mA VGS Pinch-off Voltage VDS = 3V; ID = 1 mA -0.7 -0.25 0 V IG Gate Leakage Current VDS = 3V; ID = 30 mA - - 10 µA gm Transconductance VDS = 3V; ID = 30 mA 140 200 - mS F Noise Figure* VDS = 3V; ID = 10 mA; f = 1.8 GHz ID = 30 mA 0.56 0.50 dB dB Ga Associated Gain VDS = 3V; ID = 10 mA; f = 1.8 GHz ID = 30 mA 15.0 15.0 17.0 18.0 dB dB IIP3 Input 3rd Order Intercept Point VDS = 3V; ID = 10 mA; f = 1.8 GHz ID = 30 mA 8.5 13.0 dBm dBm Note*: Parameters are measured at input impedance for minimum noise figure and output impedance for maximum gain.
Low-Noise, High-Linearity Packaged pHEMT FET For additional information and latest specifications, see our website: www.triquint.com Revision H, October 10, 2012 Electrical Characteristics, Continued: Typical Common Source S – Parameters @ 3V; 10mA; Zo = 50Ω f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
Low-Noise, High-Linearity Packaged pHEMT FET For additional information and latest specifications, see our website: www.triquint.com Revision H, October 10, 2012 Electrical Characteristics, Continued: Typical Common Source S – Parameters @ 3V; 30mA; Zo = 50Ω f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
Low-Noise, High-Linearity Packaged pHEMT FET For additional information and latest specifications, see our website: www.triquint.com Revision H, October 10, 2012 Electrical Characteristics, Continued: Typical Common Source S – Parameters @ 3V; 70mA; Zo = 50Ω f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
Low-Noise, High-Linearity Packaged pHEMT FET For additional information and latest specifications, see our website: www.triquint.com Revision H, October 10, 2012 Packaging and Ordering Information
Low-Noise, High-Linearity Packaged pHEMT FET For additional information and latest specifications, see our website: www.triquint.com Revision H, October 10, 2012 Top; Line 1: TriQuint Logo and “H8” Bottom: Last 3 char of Lot Number ESD: Electrostatic discharge sensitive device: Observe handling precautions! Additional Information 1 This part is compliant with RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). The part is rated Moisture Sensitivity Level 1 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. 1 For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: (503) 615-9000 Email: info_wireless@tqs.com Fax: (503) 615-8902 For technical questions and additional information on specific applications: Email: info_wireless@tqs.com The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright © 2004 TriQuint Semiconductor, Inc. All rights reserved.