CFH400 TRIQUINT | Alldatasheet

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For further information please visit www.triquint.com pg. 1/6 Rev. 1.2; May 29th, 2003 CFH 400 Preliminary Datasheet Description: The CFH 400 is a high-li nearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and UMTS receivers, base stations LNAs, and WLAN front-ends. The device achieves a noise figure as low as 0.55 dB with 15 dB associated gain at 1.8 GHz. It is packaged in a low-cost SOT343 package and is 100% DC tested before packaging/RF LAT after packaging. Applications:

  • PCS CDMA and UMTS Receivers
  • WLAN Multicarrier Receivers
  • Basestations Low-Noise, High-Linearity Packaged pHEMT FET Package Outline, SOT343: Features:
  • Low Noise figure and high associated gain for high IP3 receivers stages
  • Frequencies to 4 GHz
  • NF=0.55 dB; Ga=15.7 dB @ f=1.8 GHz, 3V, 10 mA
  • Low cost miniature SOT343 package
  • Lg = 0.4um; Wg = 400um
  • Tape and reel packaging Pin assignment: 1 = gate 2 = source 3 = drain 4 = source

CFH 400 Preliminary Datasheet Maximum Ratings: Parameter Symbol Unit Drain-source voltage VDS 5.5 V Drain-gate voltage VDG 6.5 V Gate-source voltage VGS -2.0 V Drain current ID 80 mA Channel temperature TCh 150 °C Storage temperature range Tstg -65...+150 °C Total power dissipation (TS < tbd°C) Ptot 150 mW Thermal resistance Channel-soldering point source RthChS 166 K/W 1) Dimensions see page 4 2) T S: Temperature measured at soldering point Electrical characteristics: at TA = 25°C unless otherwise specified Characteristics Symbol min typ max Unit Drain-source saturation current VDS = 3 V VGS = 0 V IDSS mA Pinch-off voltage VDS = 3 V ID = 1 mA VGS(P) -0.7 -0.25 V Gate leakage current VDS = 3 V ID = 15 mA IG µA Transconductance VDS = 3 V ID = 15 mA gm 100 mS Noise figure* VDS = 3 V ID = 10 mA f = 1.8 GHz VDS = 3 V ID = 15 mA f = 1.8 GHz F 0.55 0.53 dB Associated gain* VDS = 3 V ID = 10 mA f = 1.8 GHz VDS = 3 V ID = 15 mA f = 1.8 GHz Ga 15.7 16.2 dB IIP3* VDS = 3 V ID = 10 mA f = 1.8 GHz VDS = 3 V ID = 15 mA f = 1.8 GHz IIP3 8.5 dBm * Parameters are measured at input impedance for minimum noise figure and output impedance for maximum gain. For further information please visit www.triquint.com Rev. 1.2; May 29th, 2003 pg. 2/6

CFH 400 Preliminary Datasheet Electrical Characteristics, Continued: Typical Common Source S – Parameters @ 3V; 10mA; Zo = 50Ω f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang Typical Common Source Noise – Parameters @ 3V; 10mA; Zo = 50Ω f[GHz] Fmin [dB] Ga [dB] Mag (Γopt ) Phase(Γopt) [deg] Rn/50 For further information please visit www.triquint.com Rev. 1.2; May 29th, 2003 pg. 3/6

CFH 400 Preliminary Datasheet Electrical Characteristics, Continued: Typical Common Source S – Parameters @ 3V; 15mA; Zo = 50Ω f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang Typical Common Source Noise – Parameters @ 3V; 15mA; Zo = 50Ω f[GHz] Fmin [dB] Ga [dB] Mag (Γopt ) Phase(Γopt) [deg] Rn/50 For further information please visit www.triquint.com Rev. 1.2; May 29th, 2003 pg. 4/6

CFH 400 Preliminary Datasheet Semiconductor Device Outline SOT343 Pin assignment: 1 = gate 2 = source 3 = drain 4 = source For further information please visit www.triquint.com Rev. 1.2; May 29th, 2003 pg. 5/6

CFH 400 Preliminary Datasheet For further information please visit www.triquint.com pg. 6/6 Rev. 1.2; May 29th, 2003 Ordering Information: Type Marking Ordering code (taped) Package 1 CFH400 N4s Q62702-G0116 SOT343 ESD: E lectrostatic discharge sensitive device, observe handling precautions! Published by TriQuint Semiconductor GmbH, Marketing, Konrad-Zuse-Platz 1, D-81829 Munich. copyright TriQuint Semiconductor GmbH 2003. All Rights Reserved. As far as patents or other rights of third parti es are concerned, liability is only assumed for components per se, not for applications, pr ocesses and circuits implemented within components or assemblies. The information describes the type of com ponent and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of TriQuint Semiconductor in Germany or the TriQuint Semiconductor Companies and Representatives worldwide. Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest TriQuint Semiconductors Office.