CEZ6185 CET-MOS | Alldatasheet
Document overview
- PDF pages: 6
Technical content
P-Channel Enhancement Mode Field Effect Transistor CEZ6185
FEATURES
-60V, -53A, RDS(ON) = 18 mW @V GS = -10V. RDS(ON) = 23 mW @V GS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS PD -60 83.3 -212 -53 ±20 V W A A V RoHS compliant. http://www.cet-mos.com Rev 1. 2020.Nov G S S S D D D D Drain Current-Continuous -14 A Drain Current-Pulsed a -56 A P-PAK 5X6 Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Parameter Symbol Limit Units C/W1.5RqJC Thermal Resistance, Junction-to-Ambient b C/W20RqJA D D D D S S S G 1 2 3 4 8 7 6 5 ID IDM ID IDM @RqJA RqJC RqJC RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 1815 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -60 VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID =-20A VGS = -4.5V, ID =-20A VDS = -48V, ID = -20A, VGS = -4.5V VDS = -25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -20A -53 -1.2 2318 mW pF pF pF ns ns ns ns nC nC nC A V VDD = -48V, ID = -20A, VGS = -10V, RGEN = 6W 2845 295 165 115 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
Figure 11. Normalized Thermal Transient Impedance Curve
SINGLE PAD 尺寸圖 P- PAK5X6 產品外觀尺寸圖 (Product Outline Dimension) SINGLE PAD 尺寸圖 P - PA K5X6 產品外觀尺寸圖 (Product Outline Dimension) 6 .2 5 3.80 1 . 270 . 5 0 . 5 50. 770 . 5 4 . 5 0.80SINGLE PAD D A H E L1b e (2X ) c D 1 PIN #1 DOT BY MARKING 10 °TYP. 0. 10 MAX RECOMMENDED LAND PATTERN A 0.800 1.170 0.031 0.046 b 0.340 0.490 0.013 0.019 c 0.20 0.34 0.008 0.013 D 4.800 5.100 0.009 0.011 D1 3.800 4.200 0.150 0.165 D2 3.180 3.78 0.125 0.149 D3 0.150 0.360 0.006 0.142 E 5.650 5.900 0.222 0.232 e 1.270 TYP 0.050 TYP H 5.900 6.150 0.232 0.242 L1 0.050 0.250 0.002 0.010 L2 0.380 0.620 0.015 0.024 L3 0.380 0.75 0.015 0.030