CEM9953A CET-MOS | Alldatasheet
Document overview
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Technical content
Dual P-Channel Enhancement Mode Field Effect Transistor CEM9953A
FEATURES
-30V, -3.5A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 130mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -30 2.0 -14 -3.5 ±20 V W A A V 5 - 267 SO-8 D1 D1 D2 D2 S1 G1 S2 G2 8 7 6 5 1 2 3 4 Lead free product is acquired. 2002.July http://www.cet-mos.com Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 8060 -100 100 mW V nA nA µA V S 5 - 268 Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -1A VGS = -4.5V, ID = -0.5A VDS = -15V, ID = -2.9A VDD = -10V, ID = -1A, VGS = -10V, RGEN = 6W VDS = -10V, ID = -2.9A, VGS = -10V VDS = -10V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.25A 810 350 130 4.5 -1.2 -1.3 4.5 130110 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.