CEM8958A CET-MOS | Alldatasheet
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Technical content
Details are subject to change without notice . 30V, 6.8A, RDS(ON) = 28mW @VGS = 10V. Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Units Drain-Source Voltage Gate-Source Voltage @TA= 70 C Drain Current-Pulsed a Maximum Power Dissipation VDS VGS PD IDM 2.0 5.4 ±20 V W A A V SOP-8 P-Channel -30 -21 -4.3 ±20 CEM8958A http://www.cet-mos.com Rev 5. 2018.Aug RDS(ON) = 42mW @VGS = 4.5V. -30V, -5.4A, RDS(ON) = 45mW @VGS = -10V. RDS(ON) = 80mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. D1 D1 D2 D2 S1 G1 S2 G2 1 2 3 4 8 7 6 5 Drain Current-Continuous@TA= 25 C ID 6.8 A-5.4 Thermal Resistance, Junction-to-Case C/W40RqJc Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2820 1 2.5 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6.8A VGS = 4.5V, ID = 6A VDD = 15V, ID = 6.8A, VGS = 10V, RGEN =2.7W VDS = 15V, ID =6.8A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1.3A 345 105 10.7 0.7 3.3 1.3 1.2 4228 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. CEM8958A
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 4536 -1 -2.5 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -4.8A VGS = -4.5V, ID = -3.5A VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6W VDS = -15V, ID = -3.2A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.3A 675 120 11.5 1.3 2.3 -1.3 -1.2 8060 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.