CEZ3P08 CET-MOS | Alldatasheet
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Technical content
P-Channel Enhancement Mode Field Effect Transistor CEZ3P08
FEATURES
-30V, -61A, RDS(ON) = 9 mW @VGS = -10V. RDS(ON) = 13 mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS PD -30 54.3 -244 -61 ±20 V W A A V RoHS compliant. http://www.cet-mos.com Rev 2. 2015.July Details are subject to change without notice . G S S S D D D D Drain Current-Continuous -21 A Drain Current-Pulsed a -84 A P-PAK 5X6 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Parameter Symbol Limit Units C/W2.3RqJC Thermal Resistance, Junction-to-Ambient b C/W20RqJA D D D D S S S G 1 2 3 4 8 7 6 5 ID IDM ID IDM @RqJA RqJC RqJC RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 97.4 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = -10V, ID =-13A VGS =-4.5V, ID =-10A VDS = -15V, ID = -13A, VGS = -5V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -13A 4165 475 365 122 -61 -1.1 139 mW pF pF pF ns ns ns ns nC nC nC A V VDD = -15V, ID = -15A, VGS = -10V, RGEN = 6W Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.