CEZ1320P CET-MOS | Alldatasheet
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Technical content
P-Channel Enhancement Mode Field Effect Transistor CEZ1320P
FEATURES
-200V, -12.5A, RDS(ON) = 0.36 W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TC = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS PD -200 -12.8 -3.2 ±30 V W A A V RoHS compliant. http://www.cet-mos.com Rev 2. 2021.Nov G S S S D D D D Drain Current-Continuous -12.5 A Drain Current-Pulsed a -50 A P-PAK 5X6 Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Parameter Symbol Limit Units C/W1.3RqJC Thermal Resistance, Junction-to-Ambient b C/W20RqJA D D D D S S S G 1 2 3 4 8 7 6 5 ID IDM ID IDM @RqJC RqJA RqJA RqJC Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e EAS IAS 165 10.5 mJ A
Electrical Characteristics TC = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.360.28 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -200 VDS = -200V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID =-5.2A VDS = -25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -12.5A -12.5 -1.2 pF pF pF ns ns ns ns nC nC nC A V VDD = -100V, ID = -13.5A, VGS = -10V, RGEN = 25W 1620 240 260 120 VDD = -160V, ID = -13.5A, VGS = -10V Notes : a .Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c .Pulse Test : Pulse Width < 300 µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e .L = 3mH, IA S =10.5A, VD D = 25V, RG = 25W, Starting TJ = 25 C.
Figure 11. Normalized Thermal Transient Impedance Curve
SINGLE PAD 尺寸圖 P- PAK5X6 產品外觀尺寸圖 (Product Outline Dimension) D b E H L1c 1.0 (R E F) A e M I L L I M E T E R S I NC H E S SY M B OL S M I N M A X M I N M AX A 0.900 1.100 0.035 0.043 b 0.520 0.750 0.020 0.030 c 0.20 0.30 0.008 0.012 D 4.800 5.000 0.189 0.197 D1 3.610 3.960 0.142 0.156 D2 3.380 3.780 0.133 0.149 D3 0.200 0.300 0.008 0.012 E 5.700 5.800 0.224 0.228 e 1.270 T Y P 0.050 T Y P H 6.250 6.450 0.246 0.254 L 1 0.250 0.400 0.010 0.016 L 2 0.580 0.780 0.023 0.031 L 3 0.680 0.880 0.027 0.035