CEZ1100P CET-MOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
P-Channel Enhancement Mode Field Effect Transistor CEZ1100P
FEATURES
-100V, -7A, RDS(ON) = 260mW @VGS = -10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. http://www.cet-mos.com Rev 2. 2019.Feb S G D Details are subject to change without notice . ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Maximum Power Dissipation VDS VGS -100 2.5 -8.8 -7.0 ±20 V W A A V -4.4 A Drain Current-Pulsed a -28 A Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case b Parameter Symbol Limit Units C/W5RqJc Thermal Resistance, Junction-to-Ambient b C/W50RqJA -2.2 A -1.4 A W P-PAK 3X3 ID @RqJC 25 C ID @RqJC 100 C ID @RqJA 25 C ID @RqJA 100 C IDM @RqJC 25 C IDM @RqJA 25 C PD @RqJC PD @RqJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF -2 -4 -100 100 V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -100 VDS = -100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VDD = -80V, ID = -7A, VGS= -10V, RGEN= 6W VDS = -80V, ID = -7A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1A 680 100 -1.2 pF pF pF ns ns ns ns nC nC nC A V VGS = -10V, ID = -4A 260210 mW Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
Figure 12. Normalized Thermal Transient Impedance Curve
D A c E e K L L2 E2 E3D2 b PIN #1 DOT BY MARKING P-PAK 3X3 產品外觀尺寸圖 (Product Outline Dimension) SINGLE PAD尺寸圖 0.650.50 0.35 1.70 2.28 1.40 0.42 0.40 0.30 0.35 2.50 0.43 3.35 (SINGLE PAD) (Lead Pattern Recommendation) MILLIMETERS INCHES SYMBOLS MIN MAX MIN MAX A 0.7 0.85 0.028 0.033 b 0.20 0.40 0.008 0.016 c 0.10 0.25 0.004 0.010 D 3.15 3.45 0.124 0.136 D1 3.00 3.25 0.118 0.128 D2 2.29 2.65 0.090 0.104 E 3.15 3.45 0.124 0.136 E1 2.90 3.20 0.114 0.126 E2 1.54 1.94 0.061 0.076 E3 0.28 0.65 0.011 0.026 E4 0.37 0.77 0.015 0.030 e 0.65(BSC) 0.026(BSC) K 0.50 0.89 0.02 0.035 L 0.30 0.50 0.012 0.020 L1 0.06 0.20 0.002 0.008 L2 0.27 0.57 0.011 0.022 CEZ1100P