CEZ03R10 CET-MOS | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor CEZ03R10
FEATURES
100V, 125A, RDS(ON) = 3.7 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 100 104 500 125 ±20 V W A A V RoHS compliant. http://www.cet-mos.com Rev 1. 2020.Jan Single Pulsed Avalanche Current e IAS 30 A Single Pulsed Avalanche Energy e EAS 450 mJ G S S S D D D D Drain Current-Continuous ID 30 A Drain Current-Pulsed a IDM 120 A Details are subject to change without notice . P-PAK 5X6 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Parameter Symbol Limit Units C/W1.2RqJC Thermal Resistance, Junction-to-Ambient b C/W20RqJA D D D D S S S G 1 2 3 4 8 7 6 5 @RqJA RqJC RqJC RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 3.73.1 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 10mA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 100 VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID =50A VDS = 50V, ID = 20A, VGS = 10V VDS = 50V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 50A 3875 725 107 1.3 pF pF pF ns ns ns ns nC nC nC A V VDD = 50V, ID = 20A, VGS = 10V, RGEN = 3.6W Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.L = 1mH, IAS =30A, VDD = 24V, RG = 25W, Starting TJ = 25 C. Qrr Reverse Recovery Time Trr 51 VR = 50V, IF = 50A, dIF /dt = 100A/us ns nCReverse Recovery Charge Gate input resistance Rg f=1MHz,open Drain 1.2 W
Figure 12. Normalized Thermal Transient Impedance Curve