CEW20N65SA CET-MOS | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor CEW20N65SA
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700V@TJ max, 20A, RDS(ON) = 0.18W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 650 1.64 205 ±30 V W A A V W/ C S G DRoHS compliant. http://www.cet-mos.com Drain Current-Continuous @ TC = 100 C @ TC = 25 C 13 A TO-247 D S G Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.61RqJC RqJA Rev 1. 2022.May Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS IAS 607.5 4.5 mJ A Details are subject to change without notice .
Electrical Characteristics Tc = 25 C unless otherwise noted CEW20N65SA Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.180.15 2 4 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 650 VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 20A VDD = 520V, ID = 10A, VGS = 10V, RGEN = 6W VDS = 520V, ID = 10A, VGS = 10V VDS = 150V,VGS= 0V, f = 1MHz VGS = 0V, IS = 20A 1.5 pF pF pF ns ns ns ns nC nC nC A V 1570 Gate input resistance Rg f=1MHz,open Drain 4.7 W d.L = 60mH, IAS =4.5A, VDD = 50V, RG = 25W, Starting TJ = 25 C. Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. Reverse Recovery Time Trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irr 257 3.04ID = 20A, di/dt =100A/us ns µC 22 A Reverse diode dv/dt ruggedness, VDS = 0...480V , ISD < ID MOSFET dv/dt ruggedness, VDS = 0...480V Maximum diode commutation speed dv/dt diF/dt IDR = 10A, VGS = 0V, VDD = 400V VDS = 0...400V, ISD< = 20A Tj= 25 C 1100 160 V/ns V/ns A/µs
Figure 12. Normalized Thermal Transient Impedance Curve