CEU65P03 CET-MOS | Alldatasheet
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Technical content
P-Channel Enhancement Mode Field Effect Transistor CED65P03/CEU65P03
FEATURES
-30V, -65A, RDS(ON) = 9mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM -30 0.5 62.5 -260 -65 ±20 V W A A V W/ C S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D Lead free product is acquired. RDS(ON) = 12mW @VGS = -4.5V. http://www.cet-mos.com Rev 1. 2011.Sep Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 2.2RqJC RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 97.2 -1 -3 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -30A VGS = -4.5V, ID = -20A VDD = -15V, ID = -15A, VGS = -10V, RGEN= 6W VDS = -15V, ID = -13A, VGS = -5V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -30A 4165 475 365 122 244 -65 128.8 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Figure 4. On-Resistance Variation Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage