CEU655 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=150V,ID=15A,RDS(ON)<290mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 15 A Continuous Drain Current-TC=100℃ 6.5 Pulsed Drain Current 58 EAS Single Pulse Avalanche Energy5 150 mJ PD Power Dissipation,TC=25℃ 30 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 4.17 ℃/W RƟJA Thermal Resistance,Junction to Ambient -- D S G CEU655 All d ata sheet.com
www.doingter.cn — 2 — Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 150 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=150V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.5 1.8 2.5 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=5A --- 255 290 mΩ GFS Forward Transconductance VDS=25V, ID=6A 3.5 --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 690 --- pF Coss Output Capacitance --- 120 --- Crss Reverse Transfer Capacitance --- 90 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=30V, ID=2A, VGS=10V,RGEN=2.5Ω --- 11 --- ns tr Rise Time --- 7.4 --- ns td(off) Turn-Off Delay Time --- 35 --- ns tf Fall Time --- 9.1 --- ns Qg Total Gate Charge VGS=10V, VDS=30V, ID=3A --- 15.5 --- nC Qgs Gate-Source Charge --- 3.2 --- nC Qgd Gate-Drain “Miller” Charge --- 4.7 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=9A --- --- 1.5 V Ls Continuous Source Current2 --- 15 A CEU655 Electrical Characteristics：(TC=25℃ unless otherwise noted) All d ata sheet.com
— —5 Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance CEU655 0086-0755-8278-9056 www.doingter.cn All d ata sheet.com