CEU6405 CET-MOS | Alldatasheet
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Technical content
P-Channel Enhancement Mode Field Effect Transistor CED6405/CEU6405
FEATURES
-60V, -20A, RDS(ON) = 48mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Rating Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM -60 0.29 -80 -20 V W A A W/ C S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RDS(ON) = 62mW @VGS = -4.5V. RoHS compliant. http://www.cet-mos.com Rev 3. 2020.June Details are subject to change without notice . V±25 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 3.5RqJC RqJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 4839 -1 -3 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -60 VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -10A VGS = -4.5V, ID = -5A VDD = -48V, ID = -20A, VGS = -10V, RGEN = 6W VDS = -48V, ID = -20A, VGS = -10V VDS = -25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -9A 1320 125 -20 -1.5 6248 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
Figure 12. Normalized Thermal Transient Impedance Curve