CEU6060N CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CED6060N/CEU6060N
FEATURES
60V, 34A, RDS(ON) = 25mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 0.42 62.5 136 ±20 V W A A V W/ C Lead free product is acquired. http://www.cet-mos.com S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D TO-251 & TO-252 package. Operating and Store Temperature Range TJ,Tstg -65 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 2.4RqJC RqJA Details are subject to change without notice . Rev 1. 2008.Sep.
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2 4 -100 100 mW V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 15A VDS = 10V, ID = 15A VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7W VDS = 48V, ID = 34A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 15A 1320 310 28.7 6.3 9.7 38.1 1.3 pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 34A . g.Full package VSD test condition IS = 34A . h.L = 0.19mH, IAS = 42A, VDD = 50V, RG = 25W, Starting TJ = 25 C