CEU55N15 CET-MOS | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor CED55N15/CEU55N15
FEATURES
150V, 55A, RDS(ON) = 17mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 150 0.68 220 ±20 V W A A V W/ C S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RoHS compliant. Rev 1. 2022.Jan http://www.cet-mos.com Single Pulsed Avalanche Current e IAS 25 A Single Pulsed Avalanche Energy e EAS 31.25 mJ Details are subject to change without notice . Drain Current-Continuous @ TC = 25 C @ TC = 100 C 35 A Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 1.45RqJC RqJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2 4 -100 100 V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 150 VDS = 150V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 20A VDD = 75V, ID = 20A, VGS = 10V, RGEN = 10W VDS = 75V, ID = 20A, VGS = 10V VDS = 75V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 20A 1920 225 1.2 pF pF pF ns ns ns ns nC nC nC A V 13.2 mW Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Device Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.L =0.1mH, IAS =25A, VDD = 50V, RG = 25W, Starting TJ = 25 C.
Figure 12. Normalized Thermal Transient Impedance Curve