CEU55N10

CEU55N10 DOINGTER | Alldatasheet

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Channel MOSFET uses advanced SGT technology and www.doingter.cn — 1 — Description： This N- design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=60A,RDS(ON)<12mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃1 60 A Pulsed Drain Current2 180 PD Power Dissipation3,TC=25℃3 107 W EAS 65 MJ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 1.17 ℃/W RƟJA Thermal Resistance,Junction to Ambient4 62 Single pulsed avalanche energy4) CEU55N10 All d ata sheet.com

www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Ma x Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- 100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.5 --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 9 12 mΩ VGS=4.5V,ID=10A --- 12 14 Rg 5.5 --- Ω Dynamic Characteristics Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 1998.1 --- pF Coss Output Capacitance --- 321.7 --- Crss Reverse Transfer Capacitance --- 7.1 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V, ID=25A, VGS=10V,RGEN=2Ω --- 22.1 --- ns tr Rise Time --- 5.2 --- ns td(off) Turn-Off Delay Time --- 44 --- ns tf Fall Time --- 8.4 --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=25A --- 28.9 --- nC Qgs Gate-Source Charge --- 6 --- 3.7 --- nC Gate resistance f= 1 MHz, Open drain Vplateau Gate plateau voltage CEU55N10 All d ata sheet.com

www.doingter.cn — 3 — Qgd Gate-Drain “Miller” Charge --- 6.8 --- Drain-Source Diode Characteristics --- --- 60 A --- --- 180 VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.3 V lmm 6.4 --- A trr Reverse Recovery Time 102.9 Ns qrr Reverse Recovery Charge 379 --- nc Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) IS Diode forward current ISP Pulsed source current Peak reverse recovery current IS=25 A, di/dt=100 A/μs VGS<Vth 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 °C. 5) The value of RθJA is measured with the device mounted on 1 in 2 FR- 4 board with 2oz. Copper, in a still air environment with Ta=25 °C. Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 0 3 6 9 12 15 100 150 200 VGS= 10 VTj = 25 ℃ VGS= 6 V VGS= 4 V VGS= 5.5 V VGS= 5 V VGS= 4.5 V VGS= 3.5 V ID, Drain current (A) VDS, Drain-source voltage (V) 2 4 6 8 10 100 Tj = 25 ℃ ID, Drain current(A) VGS, Gate-source voltage(V) VDS= 10 V CEU55N10 All d ata sheet.com

www.doingter.cn — 4 — Figure 3, Typ. capacitances Figure 4, Typ. gate charge Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance 0 20 40 60 80 100 100 102 104 Ciss f = 100 kHz VGS = 0 V C, Capacitance (pF) VDS, Drain-source voltage (V) Coss Crss 0 5 10 15 20 25 30 0.0 2.5 5.0 7.5 10.0 ID = 25 A VDS = 50 V VGS, Gate-source voltage(V) Qg, Gate charge(nC) -50 0 50 100 150 105 110 115 120BVDSS, Drain-source breakdown voltage (V) Tj, Junction temperature (℃) ID = 250 μA VGS = 0 V -50 0 50 100 150 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 ID = 20 A VGS = 10 V Tj, Junction Temperature (℃) RDS(ON), On-resistance(Ω) Figure 7, Threshold voltage Figure 8, Forward characteristic of body diode -50 0 50 100 150 1.0 1.5 2.0 2.5 3.0 ID = 250 μA Tj, Junction Temperature (℃) Vth, Threshold voltage (V) 0.4 0.8 1.2

100 Tj = 25 ℃

IS, Source current (A) VSD, Source-Drain voltage (V) CEU55N10 All d ata sheet.com