CEU4279 CET-MOS | Alldatasheet
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Technical content
Dual Enhancement Mode Field Effect Transistor (N and P Channel) CED4279/CEU4279
FEATURES
40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol P-Channel Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID e PD IDM 0.08 10.4 ±20 V W A A V W/ C RDS(ON) = 46mW @VGS = 4.5V. Lead free product is acquired. -40V , -9A , RDS(ON) = 72mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4.5V. D1/D2 CEU SERIES TO-252-4L D1/D2 N-Channel -36 ±20 http://www.cet-mos.com Rev 2. 2007.Jan Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 12RqJC RqJA
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 3225 1 3 -100 100 mW V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS c Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 8A VGS = 4.5V, ID = 6A VDS = 5V, ID = 8A VDD = 20V, ID = 6A, VGS = 10V, RGEN = 3W VDS = 20V, ID = 6A, VGS = 4.5V VDS = 20V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1A 1055 160 100 3.7 4.2 13.3 1.2 4635 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A. CED4279/CEU4279
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance c Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 7260 -2 -4 -100 100 mW V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -40 VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -8A VGS = -4.5V, ID = -6A VDS = -5V, ID = -8A VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6W VDS = -20V, ID = -4.5A, VGS = -4.5V VDS = -20V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1A 710 130 5.8 1.9 2.5 7.7 -1.2 11090 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A. gFS c