CEU40N20 CET-MOS | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor CED40N20/CEU40N20
FEATURES
200V, 40A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS PD IDM 200 0.71 107 160 ±20 V W A V W/ C S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RoHS compliant http://www.cet-mos.com Rev .1 2022.Nov Details are subject to change without notice . ID Drain Current-Continuous @ TC = 100 C @ TC = 25 C A A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 1.4RqJC RqJA Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS IAS 30 180 A mJ
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2 4 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 200 VDS = 200V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 10A VDD = 100V, ID = 10A, VGS = 10V, RGEN = 10W VDS = 100V, ID = 10A, VGS = 10V VDS = 100V, VGS=0V, f = 1.0 MHz VGS = 0V, IS = 10A 1470 170 1.2 pF pF pF ns ns ns ns nC nC nC A V Gate input resistance Rg f=1MHz,open Drain 4.5 W Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 0.4mH, I AS = 30A, VDD = 50V, RG = 25W, Starting TJ = 25 C. Reverse Recovery Time Trr Reverse Recovery Charge Qrr IF = 10A, dIF /dt = 100A/us 305 ns nC
Figure 12. Normalized Thermal Transient Impedance Curve