CEU3254 CET-MOS | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor CED3254/CEU3254
FEATURES
30V, 26A, RDS(ON) = 25mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS PD IDM 0.25 104 ±20 V W A V W/ C S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RDS(ON) = 39mW @VGS = 4.5V. ID
26 ADrain Current-Continuous @ TC = 25 C
@ TC = 100 C 17 A TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free. Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS IAS 7 24.5 A mJ Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Parameter Symbol Limit Units C/W4RqJC http://www.cet-mos.com Rev 1. 2023.Mar Details are subject to change without notice . Thermal Resistance, Junction-to-Ambient C/W50RqJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 1 3 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 10A VDD = 15V, ID = 5A, VGS = 10V, RGEN = 6W VDS = 15V, ID = 5A, VGS = 4.5V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 10A 345 100 5.4 0.8 3.2 1.2 pF pF pF ns ns ns ns nC nC nC A V 39 mWVGS = 4.5V, ID = 5A 30 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L=1mH, IAS=7A, VDD=24V, RG=25W, Starting TJ=25 C.
Figure 12. Normalized Thermal Transient Impedance Curve