CEU3053A CET-MOS | Alldatasheet
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P-Channel Enhancement Mode Field Effect Transistor CED3053A/CEU3053A
FEATURES
-30V, -87A, RDS(ON) = 5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Rating Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM -30 0.52 -348 -61 ±25 V W A A V W/ C S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RDS(ON) = 9.1mW @VGS = -4.5V. RoHS compliant. http://www.cet-mos.com Rev 1. 2022.Nov Details are subject to change without notice . Drain Current-Continuous @ TC = 25 C @ TC = 100 C A-87 18 A 162 mJ Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 1.9RqJC RqJA Single Pulsed Avalanche Current d IAS Single Pulsed Avalanche Energy d EAS
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 5.84.8 -1 -3 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -6.5A VGS = -4.5V, ID = -6.5A VDD = -15V, ID = -6.5A, VGS = -10V, RGEN = 4.7W VDS = -24V, ID = -13A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -2A 4020 840 395 321 101 -65 -1.2 9.17 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L =1mH, IAS =18A, VDD = 24V, RG = 25W, Starting TJ = 25 C.
Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Figure 4. On-Resistance Variation Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage
102 VGS=0V
Figure 12. Normalized Thermal Transient Impedance Curve