CEU2215 CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CED2215/CEU2215
FEATURES
150V, 22A, RDS(ON) = 80mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Gate-Source Voltage Drain Current-Continuous@ TC = 25 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VGS ID PD IDM 0.66 100 ±30 W A A V W/ C S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RDS(ON) = 90mW @VGS = 7V. RoHS compliant. Rev 2. 2013.Sep http://www.cetsemi.com Details are subject to change without notice . @ TC = 100 C 16 A Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS IAS 3.2 mJ A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 1.5RqJC RqJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Inout resistance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2 4 -100 100 mW V nA nA µA V W Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Rg Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 135V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS =10V, ID = 10A f=1MHz, open Drain VDD = 75V, ID = 10A, VGS = 10V, RGEN = 6W VDS = 75V, ID = 10A, VGS = 10V VDS = 75V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 22A 1205 105 1.2 pF pF pF ns ns ns ns nC nC nC A V mW VGS = 7V, ID = 10A 62 150 d.L = 0.1mH, IAS = 8A, VDD = 50V, RG = 25W, Starting TJ = 25 C. 135 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.