CEU16N10L CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CED16N10L/CEU16N10L
FEATURES
100V, 13.3A, RDS(ON) = 115mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D Lead-free plating ; RoHS compliant. Details are subject to change without notice . http://www.cet-mos.com S G D RDS(ON) = 125mW @VGS = 5V. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 100 0.34 13.3 ±20 V W A A V W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 3.5RqJC RqJA Rev 2. 2015.Dec. Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS IAS 44.2 13.3 mJ A 9.5 A
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 11595 1 3 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 100 VDS = 100, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6.5A VDD = 50V, ID = 13.3A, VGS = 10V, RGEN = 25W VDS = 80V, ID = 13.3A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 13.3A 630 105 2.7 7.5 2.2 3.5 13.3 1.5 pF pF pF ns ns ns ns nC nC nC A V mWVGS = 5V, ID = 5A 100 125 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d. L=0.5mH, IAS=13.3A, VDD=25V, RG=25W, Starting TJ=25 C
Figure 12. Normalized Thermal Transient Impedance Curve