CEU12P15 CET-MOS | Alldatasheet
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Technical content
P-Channel Enhancement Mode Field Effect Transistor CED12P15/CEU12P15
FEATURES
-150V, -12A, RDS(ON) = 0.24W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage(Typ) Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM -150 0.48 -48 -12 ±20 V W A A V W/ C S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RoHS compliant. Details are subject to change without notice 2013.May http://www.cet-mos.com Rev 2. Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e EAS IAS 250 mJ A Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 2.1RqJC RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.240.2 -2 -4 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -150 VDS = -135V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -7.5A VDS = -25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -12A 1245 175 -12 -1.2 pF pF pF ns ns ns ns nC nC nC A V VDD = -75V, ID = -7.5A, VGS = -10V, RGEN = 10W VDS = -120V, ID = -7.5A, VGS = -10V Gate input resistance Rg f=1MHz,open Drain 5.3 W -140 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.L = 5mH, IAS =10A, VDD = 25V, RG = 25W, Starting TJ = 25 C.