CET4435A CET-MOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -8.8A, RDS(ON) = 24mW @VGS = -10V. RDS(ON) = 35mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -30 -35 -8.8 ±20 V W A A V 7 - 42 S G D SOT-223 G D D S CET4435A Lead free product is acquired. http://www.cet-mos.com Rev 1. 2006.January Specification and data are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W42RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2420 -1 -3 -100 100 mW V nA nA µA V S 7 - 43 Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -8.8A VGS = -4.5V, ID = -5A VDS = -15V, ID = -8.8A VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6W VDS = -15V, ID = -4.6A, VGS = -5V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -2.1A 2220 550 230 110 140 -2.1 -1.2 3527 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.