CES2310L CET-MOS | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor CES2310L
FEATURES
30V, 4.8A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 45mW @VGS = 2.5V. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 1.25 4.8 ±12 V W A A V G D S SOT-23 High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. http://www.cet-mos.com Rev 2. 2017.June S G D RDS(ON) = 60mW @VGS = 1.8V. Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W100RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 3424 0.4 1 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 30V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 4.8A VGS = 4.5V, ID = 4A VGS = 1.8V, ID = 1A VDD = 15V, ID = 4.8A, VGS =4.5V, RGEN = 10W VDS = 15V, ID = 4.8A, VGS = 4.5V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1A 520 1.2 mW mW pF pF pF ns ns ns ns nC nC nC A V VGS = 2.5V, ID = 2A 4530 mW Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
Figure 12. Normalized Thermal Transient Impedance Curve