CES2308 CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CES2308
FEATURES
20V, 5.4A, RDS(ON) = 27mW @VGS = 4.5V. RDS(ON) = 36mW @VGS = 2.5V. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 1.25 5.4 ±12 V W A A V G D S SOT-23 High dense cell design for extremely low RDS(ON). RoHS compliant. SOT-23 package. Rugged and reliable. Details are subject to change without notice . http://www.cet-mos.com Rev 2. 2019.June G D S ESD Protected 2KV. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W100RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2721 0.5 -10 mW V µA µA µA V Gate Body Leakage Current, Reverse On Characteristics c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Typ Max VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 5.4A VGS = 2.5V, ID = 4.3A 3627 mW 1.2 Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6W VDS = 10V, ID = 5.4A, VGS = 4.5V VGS = 0V, IS = 1A 0.35 0.87 3.60 2.01 4.3 1.1 2.5 1.2 µs µs µs µs nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Ciss Coss Crss VDS = 10V, VGS = 0V, f = 1.0 MHz 130 pF pF pF
Figure 12. Normalized Thermal Transient Impedance Curve