CEP85N75V CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CEP85N75V/CEB85N75V
FEATURES
75V, 85A, RDS(ON) = 12mW @VGS = 12V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 1.33 200 340 ±30 V W A A V W/ C G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 RDS(ON) = 13mW @VGS = 10V. Lead-free plating ; RoHS compliant. http://www.cet-mos.com Rev 1. 2012.Aug S G D Drain Current-Continuous @ TC = 25 C @ TC = 100 C A Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS IAS 880 mJ A PRELIMINARY This is preliminary information on a new product in development now . Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.75RqJC RqJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 3 5 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 75V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 40A VDD = 37.5V, ID = 45A, VGS = 10V, RGEN = 4.7W VDS = 60V, ID = 75A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 40A 3450 670 1.5 pF pF pF ns ns ns ns nC nC nC A V 10.5 CEP85N75V/CEB85N75V e .Pulse width limited by safe operating area . VGS = 12V, ID = 40A 12 mW10 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L =0.87mH, IAS =45A, VDD = 38V, RG = 25W, Starting TJ = 25 C .