CEP85N75 CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM f 1.33 200 344 ±30 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP85N75 75V 12mW 86A 10V 10V 0.5 344e 86e CEB85N75 75V 86A 10V Lead free product is acquired. CEF85N75 75V 86A e TO-220/263 TO-220F CEP85N75/CEB85N75 CEF85N75 12mW 12mW http://www.cet-mos.com Rev 3. 2008.Sep. Details are subject to change without notice . Operating and Store Temperature Range Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS TJ,Tstg IAS -55 to 175 880 A mJ C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.75RqJC RqJA 880
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2 4 -100 100 mW V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 75V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 40A VDS = 15V, ID = 40A VDD = 37.5V, ID = 45A, VGS = 10V, RGEN = 4.7W VDS = 60V, ID = 75A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 40A 3500 715 166 119 1.5 pF pF pF ns ns ns ns nC nC nC A V CEP85N75/CEB85N75 CEF85N75 e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L =0.87mH, IAS =45A, VDD = 38V, RG = 25W, Starting TJ = 25 C .