CEP85A3 CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CEP85A3/CEB85A3
FEATURES
25V, 90A, RDS(ON) = 6mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-263 & TO-220 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 0.71 360 ±20 V W A A V W/ C S G D RDS(ON) = 9mW @VGS = 4.5V. Lead free product is acquired. Rev 1. 2005.September http://www.cet-mos.com G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 1.4RqJC RqJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 6.0 1 3 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 25V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 30A VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6W VDS = 15V, ID = 16A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 20A 2320 335 170 1.3 pF pF pF ns ns ns ns nC nC nC A V 5.0 9.0 mW VGS = 4.5V, ID = 24A 7.5 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testin
Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage Figure 4. On-Resistance Variation