CEP83A3 CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CEP83A3/CEB83A3
FEATURES
30V, 100A, RDS(ON) = 5.3mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 0.67 100 400 100 ±20 V W A A V W/ C G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 RDS(ON) = 8.0mW @VGS = 4.5V. Lead free product is acquired. http://www.cet-mos.com Rev 3. 2007.Oct. Details are subject to change without notice . S G D Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.5RqJC RqJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 8.0 1 3 -10 mW V uA uA µA V S Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 40A VDS = 10V, ID = 15A VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6W VDS = 15V, ID = 16A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 20A 6350 980 600 209 173 100 1.5 pF pF pF ns ns ns ns nC nC nC A V VGS = 10V, ID = 50A 5.3 mW 6.0 4.2 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.